Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs

Shui-Jinn Wang, C. K Chiang, Y. H. Chen, N. C. Su, C. C Huang, H.Y. Huang, C.-H. Wu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	International Conference on Solid State Device and materials (SSDM’09)
Place of Publication	Sendai, Japan
Publication status	Published - 2009 Oct 7

Cite this

@inproceedings{e29332180bda497ca720930246e44b2f,

title = "Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs",

author = "Shui-Jinn Wang and Chiang, {C. K} and Chen, {Y. H.} and Su, {N. C.} and Huang, {C. C} and H.Y. Huang and C.-H. Wu",

year = "2009",

month = oct,

day = "7",

language = "English",

booktitle = "International Conference on Solid State Device and materials (SSDM{\textquoteright}09)",

}

International Conference on Solid State Device and materials (SSDM’09). Sendai, Japan, 2009.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Trap Profile and Bias Temperature Instability of ALD-HfSiON Gate Stacks in Advanced MOSFETs

AU - Wang, Shui-Jinn

AU - Chiang, C. K

AU - Chen, Y. H.

AU - Su, N. C.

AU - Huang, C. C

AU - Huang, H.Y.

AU - Wu, C.-H.

PY - 2009/10/7

Y1 - 2009/10/7

M3 - Conference contribution

BT - International Conference on Solid State Device and materials (SSDM’09)

CY - Sendai, Japan

ER -