Results are reported from the first studies of isotopically labeled hydrogen incorporated in chemical vapor deposition (CVD) diamond films. Unexpectedly high concentrations of hydrogen were found in both microwave and filament assisted CVD diamond samples when hydrogen (H2) was replaced by deuterium (D2) as the source of atomic "hydrogen" in the gas supplied to the reactor. This suggests that at least two separate mechanisms are responsible for trapping hydrogen in diamond. The method of detection for the hydrogen and deuterium was elastic recoil spectroscopy. Using scanning electron microscopy and Rutherford backscattering spectroscopy it was found that the nucleation density, crystal size and mean growth rate of the diamond films grown by microwave assisted CVD show no effect due to the substitution of deuterium. When deuterated methane replaced regular methane there were no significant differences in the films.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Mechanical Engineering
- Materials Chemistry
- Electrical and Electronic Engineering