TREATISE ON THE CAPACITANCE-VOLTAGE RELATION OF HIGH ELECTRON MOBILITY TRANSISTORS.

Laurence P. Sadwick, K. L. Wang

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)

Abstract

A new model for the capacitance-voltage relation of a HEMT is presented. The model uses three physically motivated capacitive terms in series. The C(V) expressions are derived using the quantum mechanical triangular potential well model and the two-dimensional electron-gas charge-control model. These expressions provide further physical insight into the AlGaAs heterosystem. The results obtained should be readily applicable to such techniques as DLTS and other C-V interface measurement methods. The equations derived will also serve as a bias for analytical and circuit modeling of HEMT structures.

Original languageEnglish
Pages (from-to)651-656
Number of pages6
JournalIEEE Transactions on Electron Devices
VolumeED-33
Issue number5
DOIs
Publication statusPublished - 1986

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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