Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor

Y. K. Fang, S. B. Hwang, Yu-Cheng Lin, C. C. Lee

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

The structure and hydrogen gas sensing properties of a trench Pd-thin oxide-Si Schottky diode are studied and compared with a planar one. The trench diode possesses additional vertical surface area and a large number of interface traps induced by injected hydrogen ions. The additional vertical surface area enlarges the entrance of H2 molecules, and the generated middle traps enhance the carrier tunneling. Also, the generated shallow traps can catch the carrier to form a thin surface charge layer and lower the barrier. The sensitivity of the trench diode is thus higher than that of the planar diode under room-temperature operation.

Original languageEnglish
Pages (from-to)2686-2688
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number25
DOIs
Publication statusPublished - 1990 Dec 1
Externally publishedYes

Fingerprint

Schottky diodes
metal oxide semiconductors
diodes
traps
sensitivity
sensors
hydrogen
gases
hydrogen ions
entrances
oxides
room temperature
molecules

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Fang, Y. K. ; Hwang, S. B. ; Lin, Yu-Cheng ; Lee, C. C. / Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor. In: Applied Physics Letters. 1990 ; Vol. 57, No. 25. pp. 2686-2688.
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Trench Pd/Si metal-oxide-semiconductor Schottky barrier diode for a high sensitivity hydrogen gas sensor. / Fang, Y. K.; Hwang, S. B.; Lin, Yu-Cheng; Lee, C. C.

In: Applied Physics Letters, Vol. 57, No. 25, 01.12.1990, p. 2686-2688.

Research output: Contribution to journalArticle

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