Tri-layer structure ZnGa2O4-based resistive random access memory

Sheng Po Chang; Wei Lun Huang; Liang Wei Huang; Sheng Ying Pan; Wei Chih Lai; Shoou Jinn Chang

doi:10.1149/2162-8777/ac04fd

Tri-layer structure ZnGa₂O₄-based resistive random access memory

Sheng Po Chang, Wei Lun Huang, Liang Wei Huang, Sheng Ying Pan, Wei Chih Lai, Shoou Jinn Chang

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This study aimed to improve the performance of RRAM cell with switching layer of ZnGa₂O₄. We used radio frequency magnetron sputtering system to insert two layers of gallium-related oxide materials, Al_0.05Ga_0.95O and In_0.9Ga_0.1O, into the resistance-switching layer. The on/off ratio can be increased from 10¹ to 10² by inserting Al_0.05Ga_0.95O layer. Moreover, with the aids of In_0.9Ga_0.1O layer, reset voltage of the RRAM device can be reduced to -0.7 V. The heterostructure effectively increases the on/off ratio and lowers the working voltage of the device, which not only improves the memory characteristics but also decreases the power consumption. In addition, the heterojunction memory can switch between high- and low-resistance states more than 100 times and keep stable at each state for 10000 s at room temperature.

Original language	English
Article number	065003
Journal	ECS Journal of Solid State Science and Technology
Volume	10
Issue number	6
DOIs	https://doi.org/10.1149/2162-8777/ac04fd
Publication status	Published - 2021

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/ac04fd

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title = "Tri-layer structure ZnGa2O4-based resistive random access memory",

abstract = "This study aimed to improve the performance of RRAM cell with switching layer of ZnGa2O4. We used radio frequency magnetron sputtering system to insert two layers of gallium-related oxide materials, Al0.05Ga0.95O and In0.9Ga0.1O, into the resistance-switching layer. The on/off ratio can be increased from 101 to 102 by inserting Al0.05Ga0.95O layer. Moreover, with the aids of In0.9Ga0.1O layer, reset voltage of the RRAM device can be reduced to -0.7 V. The heterostructure effectively increases the on/off ratio and lowers the working voltage of the device, which not only improves the memory characteristics but also decreases the power consumption. In addition, the heterojunction memory can switch between high- and low-resistance states more than 100 times and keep stable at each state for 10000 s at room temperature.",

author = "Chang, {Sheng Po} and Huang, {Wei Lun} and Huang, {Liang Wei} and Pan, {Sheng Ying} and Lai, {Wei Chih} and Chang, {Shoou Jinn}",

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year = "2021",

doi = "10.1149/2162-8777/ac04fd",

language = "English",

volume = "10",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Tri-layer structure ZnGa2O4-based resistive random access memory

AU - Chang, Sheng Po

AU - Huang, Wei Lun

AU - Huang, Liang Wei

AU - Pan, Sheng Ying

AU - Lai, Wei Chih

AU - Chang, Shoou Jinn

PY - 2021

Y1 - 2021

N2 - This study aimed to improve the performance of RRAM cell with switching layer of ZnGa2O4. We used radio frequency magnetron sputtering system to insert two layers of gallium-related oxide materials, Al0.05Ga0.95O and In0.9Ga0.1O, into the resistance-switching layer. The on/off ratio can be increased from 101 to 102 by inserting Al0.05Ga0.95O layer. Moreover, with the aids of In0.9Ga0.1O layer, reset voltage of the RRAM device can be reduced to -0.7 V. The heterostructure effectively increases the on/off ratio and lowers the working voltage of the device, which not only improves the memory characteristics but also decreases the power consumption. In addition, the heterojunction memory can switch between high- and low-resistance states more than 100 times and keep stable at each state for 10000 s at room temperature.

AB - This study aimed to improve the performance of RRAM cell with switching layer of ZnGa2O4. We used radio frequency magnetron sputtering system to insert two layers of gallium-related oxide materials, Al0.05Ga0.95O and In0.9Ga0.1O, into the resistance-switching layer. The on/off ratio can be increased from 101 to 102 by inserting Al0.05Ga0.95O layer. Moreover, with the aids of In0.9Ga0.1O layer, reset voltage of the RRAM device can be reduced to -0.7 V. The heterostructure effectively increases the on/off ratio and lowers the working voltage of the device, which not only improves the memory characteristics but also decreases the power consumption. In addition, the heterojunction memory can switch between high- and low-resistance states more than 100 times and keep stable at each state for 10000 s at room temperature.

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JF - ECS Journal of Solid State Science and Technology

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ER -

Tri-layer structure ZnGa₂O₄-based resistive random access memory

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