Abstract
Chemical mechanical polishing (CMP) is a key technique for wafer global planarization. Many studies have been conducted in recent years to analyse the slurry flow between a pad and a wafer due to its importance in CMP processing. In these studies, however, the grains in the slurry were not considered. Thus this investigation uses a grain flow model to analyse the slurry flow between wafer and pad. The proposed model predicts the film thickness of the slurry flow with various convex wafer curvature radius under a variety of the CMP parameters including load, rotation speed and grain size. The theoretical results compare well with experimental data in the literature. This study elucidates grain flow during CMP processing and further contributes to understanding of the CMP mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 1585-1591 |
| Number of pages | 7 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 35 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2002 Jul 7 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Tribological analysis on powder slurry in chemical mechanical polishing. / Jeng, Yeau-Ren; Tsai, Hung Jung.
In: Journal of Physics D: Applied Physics, Vol. 35, No. 13, 07.07.2002, p. 1585-1591.Research output: Contribution to journal › Article
TY - JOUR
T1 - Tribological analysis on powder slurry in chemical mechanical polishing
AU - Jeng, Yeau-Ren
AU - Tsai, Hung Jung
PY - 2002/7/7
Y1 - 2002/7/7
N2 - Chemical mechanical polishing (CMP) is a key technique for wafer global planarization. Many studies have been conducted in recent years to analyse the slurry flow between a pad and a wafer due to its importance in CMP processing. In these studies, however, the grains in the slurry were not considered. Thus this investigation uses a grain flow model to analyse the slurry flow between wafer and pad. The proposed model predicts the film thickness of the slurry flow with various convex wafer curvature radius under a variety of the CMP parameters including load, rotation speed and grain size. The theoretical results compare well with experimental data in the literature. This study elucidates grain flow during CMP processing and further contributes to understanding of the CMP mechanism.
AB - Chemical mechanical polishing (CMP) is a key technique for wafer global planarization. Many studies have been conducted in recent years to analyse the slurry flow between a pad and a wafer due to its importance in CMP processing. In these studies, however, the grains in the slurry were not considered. Thus this investigation uses a grain flow model to analyse the slurry flow between wafer and pad. The proposed model predicts the film thickness of the slurry flow with various convex wafer curvature radius under a variety of the CMP parameters including load, rotation speed and grain size. The theoretical results compare well with experimental data in the literature. This study elucidates grain flow during CMP processing and further contributes to understanding of the CMP mechanism.
UR - http://www.scopus.com/inward/record.url?scp=0037036556&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0037036556&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/35/13/322
DO - 10.1088/0022-3727/35/13/322
M3 - Article
AN - SCOPUS:0037036556
VL - 35
SP - 1585
EP - 1591
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 13
ER -