Tribological analysis on powder slurry in chemical mechanical polishing

Yeau-Ren Jeng, Hung Jung Tsai

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

Chemical mechanical polishing (CMP) is a key technique for wafer global planarization. Many studies have been conducted in recent years to analyse the slurry flow between a pad and a wafer due to its importance in CMP processing. In these studies, however, the grains in the slurry were not considered. Thus this investigation uses a grain flow model to analyse the slurry flow between wafer and pad. The proposed model predicts the film thickness of the slurry flow with various convex wafer curvature radius under a variety of the CMP parameters including load, rotation speed and grain size. The theoretical results compare well with experimental data in the literature. This study elucidates grain flow during CMP processing and further contributes to understanding of the CMP mechanism.

Original languageEnglish
Pages (from-to)1585-1591
Number of pages7
JournalJournal of Physics D: Applied Physics
Volume35
Issue number13
DOIs
Publication statusPublished - 2002 Jul 7

Fingerprint

Chemical mechanical polishing
polishing
Powders
wafers
Processing
Film thickness
film thickness
grain size
curvature
radii

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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Tribological analysis on powder slurry in chemical mechanical polishing. / Jeng, Yeau-Ren; Tsai, Hung Jung.

In: Journal of Physics D: Applied Physics, Vol. 35, No. 13, 07.07.2002, p. 1585-1591.

Research output: Contribution to journalArticle

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