Triple-junction GaInP/GaAs/Ge Solar cells with an AZO transparent electrode and ZnO nanowires

Shoou Jinn Chang, Jei Li Hou, Ting Jen Hsueh, Kin Tak Lam, Shuguang Li, Chun Hsing Liu, Sheng Po Chang

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF2/Ta 2O5. By inserting a 4-nm-thick AuGeNi between AZO and n+-AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10-5 Ω·cm2. Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.

Original languageEnglish
Article number6510447
Pages (from-to)991-996
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number3
Publication statusPublished - 2013

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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