Triple-junction GaInP/GaAs/Ge Solar cells with an AZO transparent electrode and ZnO nanowires

Shoou Jinn Chang; Jei Li Hou; Ting Jen Hsueh; Kin Tak Lam; Shuguang Li; Chun Hsing Liu; Sheng Po Chang

doi:10.1109/JPHOTOV.2013.2258192

Triple-junction GaInP/GaAs/Ge Solar cells with an AZO transparent electrode and ZnO nanowires

Shoou Jinn Chang, Jei Li Hou, Ting Jen Hsueh, Kin Tak Lam, Shuguang Li, Chun Hsing Liu, Sheng Po Chang

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF₂/Ta ₂O₅. By inserting a 4-nm-thick AuGeNi between AZO and n⁺-AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10^-5 Ω·cm². Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.

Original language	English
Article number	6510447
Pages (from-to)	991-996
Number of pages	6
Journal	IEEE Journal of Photovoltaics
Volume	3
Issue number	3
DOIs	https://doi.org/10.1109/JPHOTOV.2013.2258192
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2013.2258192

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title = "Triple-junction GaInP/GaAs/Ge Solar cells with an AZO transparent electrode and ZnO nanowires",

abstract = "In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF2/Ta 2O5. By inserting a 4-nm-thick AuGeNi between AZO and n+-AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10-5 Ω·cm2. Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.",

author = "Chang, {Shoou Jinn} and Hou, {Jei Li} and Hsueh, {Ting Jen} and Lam, {Kin Tak} and Shuguang Li and Liu, {Chun Hsing} and Chang, {Sheng Po}",

year = "2013",

doi = "10.1109/JPHOTOV.2013.2258192",

language = "English",

volume = "3",

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journal = "IEEE Journal of Photovoltaics",

issn = "2156-3381",

publisher = "IEEE Electron Devices Society",

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T1 - Triple-junction GaInP/GaAs/Ge Solar cells with an AZO transparent electrode and ZnO nanowires

AU - Chang, Shoou Jinn

AU - Hou, Jei Li

AU - Hsueh, Ting Jen

AU - Lam, Kin Tak

AU - Li, Shuguang

AU - Liu, Chun Hsing

AU - Chang, Sheng Po

PY - 2013

Y1 - 2013

N2 - In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF2/Ta 2O5. By inserting a 4-nm-thick AuGeNi between AZO and n+-AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10-5 Ω·cm2. Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.

AB - In this paper, the fabrication of GaInP/GaAs/Ge triple-junction (TJ) solar cells with an Al-doped ZnO (AZO) transparent electrode and a ZnO nanowire (NW) antireflection (AR) layer is reported. It was found that ZnO NWs/AZO could provide a smaller reflectance, as compared with AZO and MgF2/Ta 2O5. By inserting a 4-nm-thick AuGeNi between AZO and n+-AlInP, it was found that the rectifying contact could be transformed into an ohmic contact with a specific contact resistance of 1.02 × 10-5 Ω·cm2. Furthermore, it was found that the ZnO NWs/ZnO used in this study could enhance the conversion efficiency of TJ solar cells from 21.91% to 28.16%, which corresponds to a 25.4% relative enhancement in the conversion efficiency.

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JO - IEEE Journal of Photovoltaics

JF - IEEE Journal of Photovoltaics

IS - 3

M1 - 6510447

ER -

Triple-junction GaInP/GaAs/Ge Solar cells with an AZO transparent electrode and ZnO nanowires

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All Science Journal Classification (ASJC) codes

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