TY - JOUR
T1 - Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy
AU - Chen, W. C.
AU - Su, Y. K.
AU - Chuang, R. W.
AU - Hsu, S. H.
PY - 2006/4/25
Y1 - 2006/4/25
N2 - In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.
AB - In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.
UR - http://www.scopus.com/inward/record.url?scp=33646934957&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646934957&partnerID=8YFLogxK
U2 - 10.1143/JJAP.45.3537
DO - 10.1143/JJAP.45.3537
M3 - Article
AN - SCOPUS:33646934957
VL - 45
SP - 3537
EP - 3539
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 4 B
ER -