Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy

W. C. Chen; Y. K. Su; R. W. Chuang; S. H. Hsu

doi:10.1143/JJAP.45.3537

Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy

W. C. Chen, Y. K. Su, R. W. Chuang, S. H. Hsu

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.

Original language	English
Pages (from-to)	3537-3539
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.45.3537
Publication status	Published - 2006 Apr 25

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy",

abstract = "In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.",

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Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy. / Chen, W. C.; Su, Y. K.; Chuang, R. W.; Hsu, S. H.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3537-3539.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy

AU - Chen, W. C.

AU - Su, Y. K.

AU - Chuang, R. W.

AU - Hsu, S. H.

PY - 2006/4/25

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N2 - In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.

AB - In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.

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