Triple luminescence peaks observed in the InGaAsN/GaAs single quantum well grown by metalorganic vapor phase epitaxy

W. C. Chen, Y. K. Su, R. W. Chuang, S. H. Hsu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.

Original languageEnglish
Pages (from-to)3537-3539
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - 2006 Apr 25

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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