In this paper, we report the observed triple luminescence peaks of InGaAsN/GaAs single quantum well (SQW) grown by metal organic vapor phase epitaxy (MOVPE). The triplet-peak was discovered by the photoluminescence (PL) measurement performed under low temperature. The saturation of PL-peak intensities at high excitation power suggests the transition of the lower-energy peak was dominated by fewer numbers of available states as compared to the higher-energy peak. The position of the higher-energy peaks remained invariant after rapid thermal annealing (RTA) treatments revealed that the responsible transition was attributed to effects not associated with incorporated nitrogen. In addition, a large blue-shift was observed for the lower-energy peak and was likely attributed to local nitrogen bonding transformation. As results of our observation, the PL spectrum of InGaAsN SQW is mainly composed of a cluster-induced emission peak and two planar-feature peaks.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - 2006 Apr 25|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)