@inproceedings{72b4127127d246268c8cb5d762391d84,
title = "TSV/3DIC profile metrology based on infrared microscope image",
abstract = "3D IC can provide the advantages of heterogeneous integration through vertical interconnection and high performance without using advanced process. Basically, 3D IC can be implemented based on the technology of TSV (Through Silicon Via; TSV) and micro-bumps. Thus the quality of TSVs is critical to the yield of a 3D IC system. However, due to the nature of miniature and non-easy-probe, it is very difficult to validate the characteristics of topology or electricity of a TSV using traditional probing or metrology methodology during the process. In this paper, we are going to present a TSV profile metrology system for 3D IC based on the digital image processing (DIP) technique. The profiles of all TSVs in a 3D IC system can be constructed based on the images obtained from IR-microscope or SEM. The results show that our system is helpful to the inspection of TSV duing the 3D IC manufacturing.",
author = "Tang, \{Jing Jou\} and Lay, \{Young Jinn\} and Chen, \{Lih Shyang\} and Lin, \{Lian Yong\}",
year = "2011",
doi = "10.1149/1.3567695",
language = "English",
isbn = "9781607682356",
series = "ECS Transactions",
number = "1",
pages = "937--942",
booktitle = "China Semiconductor Technology International Conference 2011, CSTIC 2011",
edition = "1",
note = "10th China Semiconductor Technology International Conference 2011, CSTIC 2011 ; Conference date: 13-03-2011 Through 14-03-2011",
}