Tunable growth of (Ga xIn 1-x) 2O 3 nanowires by water vapor

Wen Tai Lin, Cheng Ying Ho, Yeh Ming Wang, Kuan Hsien Wu, Wei Yang Chou

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The tunable growth of In-doped Ga 2O 3 (Ga 2O 3:In) and Ga-doped In 2O 3 (In 2O 3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700-750°C via carbothermal reduction of Ga 2O 3/In 2O 3 powders with a fixed weight ratio. In Ar, only the Ga 2O 3:In NWs were grown, while in wet Ar the In 2O 3:Ga NWs were synthesized instead. The Ga concentration in In 2O 3 NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga 2O 3:In and In 2O 3:Ga NWs followed the vapor-liquid-solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga 2O 3 NWs and In 2O 3 NWs, respectively. The growth mechanisms and optical properties of Ga 2O 3:In and In 2O 3:Ga NWs were discussed.

Original languageEnglish
Pages (from-to)948-952
Number of pages5
JournalJournal of Physics and Chemistry of Solids
Issue number7
Publication statusPublished - 2012 Jul

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics


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