Tunable growth of (Ga xIn 1-x) 2O 3 nanowires by water vapor

Wen Tai Lin; Cheng Ying Ho; Yeh Ming Wang; Kuan Hsien Wu; Wei Yang Chou

doi:10.1016/j.jpcs.2012.02.029

Tunable growth of (Ga _xIn _1-x) ₂O ₃ nanowires by water vapor

Wen Tai Lin, Cheng Ying Ho, Yeh Ming Wang, Kuan Hsien Wu, Wei Yang Chou

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The tunable growth of In-doped Ga ₂O ₃ (Ga ₂O ₃:In) and Ga-doped In ₂O ₃ (In ₂O ₃:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700-750°C via carbothermal reduction of Ga ₂O ₃/In ₂O ₃ powders with a fixed weight ratio. In Ar, only the Ga ₂O ₃:In NWs were grown, while in wet Ar the In ₂O ₃:Ga NWs were synthesized instead. The Ga concentration in In ₂O ₃ NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga ₂O ₃:In and In ₂O ₃:Ga NWs followed the vapor-liquid-solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga ₂O ₃ NWs and In ₂O ₃ NWs, respectively. The growth mechanisms and optical properties of Ga ₂O ₃:In and In ₂O ₃:Ga NWs were discussed.

Original language	English
Pages (from-to)	948-952
Number of pages	5
Journal	Journal of Physics and Chemistry of Solids
Volume	73
Issue number	7
DOIs	https://doi.org/10.1016/j.jpcs.2012.02.029
Publication status	Published - 2012 Jul

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/j.jpcs.2012.02.029

Cite this

@article{3a09519259ec411d96466d271c6991d1,

title = "Tunable growth of (Ga xIn 1-x) 2O 3 nanowires by water vapor",

abstract = "The tunable growth of In-doped Ga 2O 3 (Ga 2O 3:In) and Ga-doped In 2O 3 (In 2O 3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700-750°C via carbothermal reduction of Ga 2O 3/In 2O 3 powders with a fixed weight ratio. In Ar, only the Ga 2O 3:In NWs were grown, while in wet Ar the In 2O 3:Ga NWs were synthesized instead. The Ga concentration in In 2O 3 NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga 2O 3:In and In 2O 3:Ga NWs followed the vapor-liquid-solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga 2O 3 NWs and In 2O 3 NWs, respectively. The growth mechanisms and optical properties of Ga 2O 3:In and In 2O 3:Ga NWs were discussed.",

author = "Lin, {Wen Tai} and Ho, {Cheng Ying} and Wang, {Yeh Ming} and Wu, {Kuan Hsien} and Chou, {Wei Yang}",

note = "Funding Information: This work was sponsored by the Republic of China National Science Council under Contract no. NSC 99–2221-E-006–088-MY2 .",

year = "2012",

month = jul,

doi = "10.1016/j.jpcs.2012.02.029",

language = "English",

volume = "73",

pages = "948--952",

journal = "Journal of Physics and Chemistry of Solids",

issn = "0022-3697",

publisher = "Elsevier Limited",

number = "7",

}

TY - JOUR

T1 - Tunable growth of (Ga xIn 1-x) 2O 3 nanowires by water vapor

AU - Lin, Wen Tai

AU - Ho, Cheng Ying

AU - Wang, Yeh Ming

AU - Wu, Kuan Hsien

AU - Chou, Wei Yang

N1 - Funding Information: This work was sponsored by the Republic of China National Science Council under Contract no. NSC 99–2221-E-006–088-MY2 .

PY - 2012/7

Y1 - 2012/7

N2 - The tunable growth of In-doped Ga 2O 3 (Ga 2O 3:In) and Ga-doped In 2O 3 (In 2O 3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700-750°C via carbothermal reduction of Ga 2O 3/In 2O 3 powders with a fixed weight ratio. In Ar, only the Ga 2O 3:In NWs were grown, while in wet Ar the In 2O 3:Ga NWs were synthesized instead. The Ga concentration in In 2O 3 NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga 2O 3:In and In 2O 3:Ga NWs followed the vapor-liquid-solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga 2O 3 NWs and In 2O 3 NWs, respectively. The growth mechanisms and optical properties of Ga 2O 3:In and In 2O 3:Ga NWs were discussed.

AB - The tunable growth of In-doped Ga 2O 3 (Ga 2O 3:In) and Ga-doped In 2O 3 (In 2O 3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700-750°C via carbothermal reduction of Ga 2O 3/In 2O 3 powders with a fixed weight ratio. In Ar, only the Ga 2O 3:In NWs were grown, while in wet Ar the In 2O 3:Ga NWs were synthesized instead. The Ga concentration in In 2O 3 NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga 2O 3:In and In 2O 3:Ga NWs followed the vapor-liquid-solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga 2O 3 NWs and In 2O 3 NWs, respectively. The growth mechanisms and optical properties of Ga 2O 3:In and In 2O 3:Ga NWs were discussed.

UR - http://www.scopus.com/inward/record.url?scp=84862815379&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862815379&partnerID=8YFLogxK

U2 - 10.1016/j.jpcs.2012.02.029

DO - 10.1016/j.jpcs.2012.02.029

M3 - Article

AN - SCOPUS:84862815379

SN - 0022-3697

VL - 73

SP - 948

EP - 952

JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 7

ER -

Tunable growth of (Ga _xIn _1-x) ₂O ₃ nanowires by water vapor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this