The tunable growth of In-doped Ga 2O 3 (Ga 2O 3:In) and Ga-doped In 2O 3 (In 2O 3:Ga) nanowires (NWs) on Au-coated Si substrates was achieved by modulating the amount of water vapor in flowing Ar at 700-750°C via carbothermal reduction of Ga 2O 3/In 2O 3 powders with a fixed weight ratio. In Ar, only the Ga 2O 3:In NWs were grown, while in wet Ar the In 2O 3:Ga NWs were synthesized instead. The Ga concentration in In 2O 3 NWs decreased with the increment of water vapor in flowing Ar. The growth of both Ga 2O 3:In and In 2O 3:Ga NWs followed the vapor-liquid-solid process. The In and Ga doping induced a redshift and a blueshift in the optical bandgaps of Ga 2O 3 NWs and In 2O 3 NWs, respectively. The growth mechanisms and optical properties of Ga 2O 3:In and In 2O 3:Ga NWs were discussed.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics