The self-assembled Ge quantum dot midinfrared photodetectors in 3-5 μm region were investigated using molecular beam epitaxy. The p-i-p structure was doped by Ge dots embedded in intrinsic layer sandwiched in two heavily p-doped regions. The as-grown sample was observed to show response at normal incidence in wavelength range of 2.2 to 3.2 μm which was peaked at 2.7 μm. The results show that annealing effect was simulated with interdiffusion behavior of Ge and Si atoms.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)