Tunable normal incidence Ge quantum dot midinfrared detectors

Song Tong, Fei Liu, A. Khitun, K. L. Wang, J. L. Liu

Research output: Contribution to journalArticlepeer-review

Abstract

The self-assembled Ge quantum dot midinfrared photodetectors in 3-5 μm region were investigated using molecular beam epitaxy. The p-i-p structure was doped by Ge dots embedded in intrinsic layer sandwiched in two heavily p-doped regions. The as-grown sample was observed to show response at normal incidence in wavelength range of 2.2 to 3.2 μm which was peaked at 2.7 μm. The results show that annealing effect was simulated with interdiffusion behavior of Ge and Si atoms.

Original languageEnglish
Pages (from-to)773-776
Number of pages4
JournalJournal of Applied Physics
Volume96
Issue number1
DOIs
Publication statusPublished - 2004 Jul 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Tunable normal incidence Ge quantum dot midinfrared detectors'. Together they form a unique fingerprint.

Cite this