Tunable slow light device using quantum dot semiconductor laser

P. C. Peng, C. T. Lin, H. C. Kuo, W. K. Tsai, J. N. Liu, S. Chi, S. C. Wang, G. Lin, H. P. Yang, K. F. Lin, J. Y. Chi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

Original languageEnglish
Pages (from-to)12880-12886
Number of pages7
JournalOptics Express
Volume14
Issue number26
DOIs
Publication statusPublished - 2006 Dec 25

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Peng, P. C., Lin, C. T., Kuo, H. C., Tsai, W. K., Liu, J. N., Chi, S., Wang, S. C., Lin, G., Yang, H. P., Lin, K. F., & Chi, J. Y. (2006). Tunable slow light device using quantum dot semiconductor laser. Optics Express, 14(26), 12880-12886. https://doi.org/10.1364/OE.14.012880