Tunable slow light device using quantum dot semiconductor laser

P. C. Peng, C. T. Lin, H. C. Kuo, W. K. Tsai, Jui-Nung Liu, S. Chi, S. C. Wang, G. Lin, H. P. Yang, K. F. Lin, J. Y. Chi

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

Original languageEnglish
Pages (from-to)12880-12886
Number of pages7
JournalOptics Express
Volume14
Issue number26
DOIs
Publication statusPublished - 2006 Dec 25

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semiconductor lasers
quantum dots
molecular beam epitaxy
adjusting
probes
wavelengths

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Peng, P. C., Lin, C. T., Kuo, H. C., Tsai, W. K., Liu, J-N., Chi, S., ... Chi, J. Y. (2006). Tunable slow light device using quantum dot semiconductor laser. Optics Express, 14(26), 12880-12886. https://doi.org/10.1364/OE.14.012880
Peng, P. C. ; Lin, C. T. ; Kuo, H. C. ; Tsai, W. K. ; Liu, Jui-Nung ; Chi, S. ; Wang, S. C. ; Lin, G. ; Yang, H. P. ; Lin, K. F. ; Chi, J. Y. / Tunable slow light device using quantum dot semiconductor laser. In: Optics Express. 2006 ; Vol. 14, No. 26. pp. 12880-12886.
@article{35b8925e5a5745bdb5db9f4555d60040,
title = "Tunable slow light device using quantum dot semiconductor laser",
abstract = "This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.",
author = "Peng, {P. C.} and Lin, {C. T.} and Kuo, {H. C.} and Tsai, {W. K.} and Jui-Nung Liu and S. Chi and Wang, {S. C.} and G. Lin and Yang, {H. P.} and Lin, {K. F.} and Chi, {J. Y.}",
year = "2006",
month = "12",
day = "25",
doi = "10.1364/OE.14.012880",
language = "English",
volume = "14",
pages = "12880--12886",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "26",

}

Peng, PC, Lin, CT, Kuo, HC, Tsai, WK, Liu, J-N, Chi, S, Wang, SC, Lin, G, Yang, HP, Lin, KF & Chi, JY 2006, 'Tunable slow light device using quantum dot semiconductor laser', Optics Express, vol. 14, no. 26, pp. 12880-12886. https://doi.org/10.1364/OE.14.012880

Tunable slow light device using quantum dot semiconductor laser. / Peng, P. C.; Lin, C. T.; Kuo, H. C.; Tsai, W. K.; Liu, Jui-Nung; Chi, S.; Wang, S. C.; Lin, G.; Yang, H. P.; Lin, K. F.; Chi, J. Y.

In: Optics Express, Vol. 14, No. 26, 25.12.2006, p. 12880-12886.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Tunable slow light device using quantum dot semiconductor laser

AU - Peng, P. C.

AU - Lin, C. T.

AU - Kuo, H. C.

AU - Tsai, W. K.

AU - Liu, Jui-Nung

AU - Chi, S.

AU - Wang, S. C.

AU - Lin, G.

AU - Yang, H. P.

AU - Lin, K. F.

AU - Chi, J. Y.

PY - 2006/12/25

Y1 - 2006/12/25

N2 - This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

AB - This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

UR - http://www.scopus.com/inward/record.url?scp=33845751004&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33845751004&partnerID=8YFLogxK

U2 - 10.1364/OE.14.012880

DO - 10.1364/OE.14.012880

M3 - Article

VL - 14

SP - 12880

EP - 12886

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 26

ER -

Peng PC, Lin CT, Kuo HC, Tsai WK, Liu J-N, Chi S et al. Tunable slow light device using quantum dot semiconductor laser. Optics Express. 2006 Dec 25;14(26):12880-12886. https://doi.org/10.1364/OE.14.012880