Tunable slow light device using quantum dot semiconductor laser

P. C. Peng; C. T. Lin; H. C. Kuo; W. K. Tsai; J. N. Liu; S. Chi; S. C. Wang; G. Lin; H. P. Yang; K. F. Lin; J. Y. Chi

doi:10.1364/OE.14.012880

Tunable slow light device using quantum dot semiconductor laser

P. C. Peng, C. T. Lin, H. C. Kuo, W. K. Tsai, J. N. Liu, S. Chi, S. C. Wang, G. Lin, H. P. Yang, K. F. Lin, J. Y. Chi

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

Original language	English
Pages (from-to)	12880-12886
Number of pages	7
Journal	Optics Express
Volume	14
Issue number	26
DOIs	https://doi.org/10.1364/OE.14.012880
Publication status	Published - 2006 Dec 25

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1364/OE.14.012880

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title = "Tunable slow light device using quantum dot semiconductor laser",

abstract = "This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.",

author = "Peng, {P. C.} and Lin, {C. T.} and Kuo, {H. C.} and Tsai, {W. K.} and Liu, {J. N.} and S. Chi and Wang, {S. C.} and G. Lin and Yang, {H. P.} and Lin, {K. F.} and Chi, {J. Y.}",

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doi = "10.1364/OE.14.012880",

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T1 - Tunable slow light device using quantum dot semiconductor laser

AU - Peng, P. C.

AU - Lin, C. T.

AU - Kuo, H. C.

AU - Tsai, W. K.

AU - Liu, J. N.

AU - Chi, S.

AU - Wang, S. C.

AU - Lin, G.

AU - Yang, H. P.

AU - Lin, K. F.

AU - Chi, J. Y.

PY - 2006/12/25

Y1 - 2006/12/25

N2 - This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

AB - This investigation experimentally demonstrates a tunable slow light device using a quantum dot (QD) semiconductor laser. The QD semiconductor laser at 1.3 μm fabricated on a GaAs substrate is grown by molecular beam epitaxy. Tunable slow light can be achieved by adjusting the bias current and wavelength detuning. The slow light device operated under probe signal from 5 to 10 GHz is presented. Moreover, we also demonstrate that the tunable slow light device can be used in a subcarrier multiplexed system.

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SP - 12880

EP - 12886

JO - Optics Express

JF - Optics Express

IS - 26

ER -

Tunable slow light device using quantum dot semiconductor laser

Abstract

All Science Journal Classification (ASJC) codes

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