Tuning surface properties in photosensitive polyimide. Material design for high performance organic thin-film transistors

Wei-Yang Chou, Chia Wei Kuo, Chia Wen Chang, Bo Liang Yeh, Ming Hua Chang

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

A photosensitive polyimide (PSPI) is synthesized to serve as the gate dielectric in organic thin-film transistors (OTFTs). A method to control the charge density within the channel of the OTFT using the PSPI on a silicon dioxide gate dielectric is proposed. The surface energy, surface carriers, and capacitance of gate dielectrics can be tuned by varying irradiation doses of UV light on the PSPI surface to create ultrahigh performance pentacene-based OTFTs with an average field-effect mobility (μ) of above 6.0 cm2/Vs. The correlation between the surface energy of the PSPI films and the μ value of OTFT devices is investigated. Moreover, the impact of gate-dielectric properties on the structural properties of pentacene films is closely related to the electrical characteristics of OTFTs. The results of contact angle, X-ray diffraction, electrostatic force microscopy, and micro-Raman spectroscopy measurements indicate that the surface energy and doping carriers coming from the PSPI film play important roles in the carrier transport of pentacene film for OTFT applications.

Original languageEnglish
Pages (from-to)5474-5480
Number of pages7
JournalJournal of Materials Chemistry
Volume20
Issue number26
DOIs
Publication statusPublished - 2010 Jul 14

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

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