A theoretical analysis is made of metal/ CdTe contacts by a numerical method. Factors which influence the current density and contact resistance of the M-S junction are discussed. For accurate analysis, besides the thermionic current component, the tunneling current, treated with the WKB approximation, is also incorporated into the current transport across the M-S junction. For accurate result, it is shown that the latter should not be neglected especially in cases of high doping concentration and low temperature. Finally, a set of optimum process parameters for contact of CdTe related devices is proposed.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry