Tunneling effect on the metal-CdTe contact

Mau-phon Houng, Feng Lin Jeng

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A theoretical analysis is made of metal/ CdTe contacts by a numerical method. Factors which influence the current density and contact resistance of the M-S junction are discussed. For accurate analysis, besides the thermionic current component, the tunneling current, treated with the WKB approximation, is also incorporated into the current transport across the M-S junction. For accurate result, it is shown that the latter should not be neglected especially in cases of high doping concentration and low temperature. Finally, a set of optimum process parameters for contact of CdTe related devices is proposed.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalSolid State Communications
Volume66
Issue number1
DOIs
Publication statusPublished - 1988 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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