Tunneling intensity enhancement of resonant tunneling effects caused by surface plasmon excitations

Peng Hsiao Lee, Yung-Chiang Lan

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This study investigates whether the resonant tunneling intensity of one groove of a metal film with periodic grooves on both surfaces can be enhanced by adjusting the relative permittivity of adjacent grooves of the emitting plane. As the relative permittivity of the side grooves of the emitting plane increases, the emission intensity of the center groove first increases but eventually saturates. This property is mainly attributable to concentration of incident intensity in the center groove of the incident plane. Larger numbers of lumped grooves or larger distances between two adjacent grooves increases the intensity of light entering the system, which ultimately increases the intensity of emitted light. This enhanced emission intensity achieved by resonant tunneling effects has potential applications in future plasmonic transistor designs.

Original languageEnglish
Pages (from-to)183-187
Number of pages5
JournalPlasmonics
Volume5
Issue number2
DOIs
Publication statusPublished - 2010 Mar 8

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Resonant tunneling
Permittivity
Light
Transistors
Metals

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Biophysics
  • Biochemistry

Cite this

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Tunneling intensity enhancement of resonant tunneling effects caused by surface plasmon excitations. / Lee, Peng Hsiao; Lan, Yung-Chiang.

In: Plasmonics, Vol. 5, No. 2, 08.03.2010, p. 183-187.

Research output: Contribution to journalArticle

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