Tunnelling efficiency of n+-InGaN/GaN short period superlattice tunnelling contact layer for nitride-based light emitting diodes

C. H. Liu, Y. K. Su, L. W. Wu, S. J. Chang, R. W. Chuang

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)

Abstract

Nitride-based light emitting diodes (LEDs) with Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunnelling contact top layers have been fabricated. By using such a SPS structure, we can significantly reduce the specific contact resistance, and thus the operation voltage, of the fabricated LEDs. We have also found that the LED operation voltage is almost independent of the CP2Mg flow rate when we grow the underlying p-type GaN layers.

Original languageEnglish
Pages (from-to)545-548
Number of pages4
JournalSemiconductor Science and Technology
Volume18
Issue number6
DOIs
Publication statusPublished - 2003 Jun

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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