Abstract
Nitride-based light emitting diodes (LEDs) with Si-doped n+-In0.23Ga0.77N/GaN short-period superlattice (SPS) tunnelling contact top layers have been fabricated. By using such a SPS structure, we can significantly reduce the specific contact resistance, and thus the operation voltage, of the fabricated LEDs. We have also found that the LED operation voltage is almost independent of the CP2Mg flow rate when we grow the underlying p-type GaN layers.
Original language | English |
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Pages (from-to) | 545-548 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 18 |
Issue number | 6 |
DOIs | |
Publication status | Published - 2003 Jun |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry