Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure

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Abstract

We report the fabrication and characterization of resistive random access memory (RRAM) with a Ti/MgZnO/Pt structure at room temperature. Four different resistive states are obtained by applying different stop voltages (Vstop) for the reset process. These four resistance states show good retention characteristics without any degradation and can be clearly distinguished from one another by more than 10 000 seconds under 100 mV stress. The current transport mechanism is dictated by a Schottky emission as the stop voltage Vstop increases from 1 to 1.5 V. The mechanism of multilevel RS is investigated and band diagrams are used to explain the multilevel RS phenomenon associated with Ti/MgZnO/Pt based RRAM devices.

Original languageEnglish
Pages (from-to)88166-88170
Number of pages5
JournalRSC Advances
Volume5
Issue number107
DOIs
Publication statusPublished - 2015 Jan 1

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Chemical Engineering(all)

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