Two-dimensional electron gases in delta-doped GaAs/In0.25Ga 0.75As/GaAs heterostructures

W. Lin, Wei-Chou Hsu, T. S. Wu, S. Z. Chang, C. Wang, C. Y. Chang

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm -2) can be realized. Experimental results show that a structure with an 80 Å In0.25Ga0.75As layer as the active channel and an 80 Å spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.

Original languageEnglish
Pages (from-to)2681-2683
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number23
DOIs
Publication statusPublished - 1991 Dec 1

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electron gas
metalorganic chemical vapor deposition
field effect transistors
low pressure
spacers
aluminum gallium arsenides
modulation
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, W. ; Hsu, Wei-Chou ; Wu, T. S. ; Chang, S. Z. ; Wang, C. ; Chang, C. Y. / Two-dimensional electron gases in delta-doped GaAs/In0.25Ga 0.75As/GaAs heterostructures. In: Applied Physics Letters. 1991 ; Vol. 58, No. 23. pp. 2681-2683.
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abstract = "Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm -2) can be realized. Experimental results show that a structure with an 80 {\AA} In0.25Ga0.75As layer as the active channel and an 80 {\AA} spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.",
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Two-dimensional electron gases in delta-doped GaAs/In0.25Ga 0.75As/GaAs heterostructures. / Lin, W.; Hsu, Wei-Chou; Wu, T. S.; Chang, S. Z.; Wang, C.; Chang, C. Y.

In: Applied Physics Letters, Vol. 58, No. 23, 01.12.1991, p. 2681-2683.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Two-dimensional electron gases in delta-doped GaAs/In0.25Ga 0.75As/GaAs heterostructures

AU - Lin, W.

AU - Hsu, Wei-Chou

AU - Wu, T. S.

AU - Chang, S. Z.

AU - Wang, C.

AU - Chang, C. Y.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm -2) can be realized. Experimental results show that a structure with an 80 Å In0.25Ga0.75As layer as the active channel and an 80 Å spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.

AB - Delta-doped (δ-doped)GaAs/In0.25Ga0.75As/GaAs strained-layer modulation-doped field-effect transistor (δ-SMODFET) structures grown by the low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique have been studied for the first time. The δ-doped GaAs, adopted as the electron supplier, was obtained by a stop-growth process so that a very thin and heavily doped layer (1.9×1013 cm -2) can be realized. Experimental results show that a structure with an 80 Å In0.25Ga0.75As layer as the active channel and an 80 Å spacer layer demonstrated the highest two-dimensional electron gases mobility of 26 800 cm2/V s. This structure is easy to achieve by the LP-MOCVD method because the growth of AlGaAs is avoided and is promising for high performance FETs.

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