Two-stage hot-carrier-induced degradation of p-type LDMOS transistors

Jone-Fang Chen, Tzu Hsiang Chen, Deng Ren Ai

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Hot-carrier-induced device degradation of high-voltage p-type lateral diffused metal-oxide semiconductor (LDMOS) transistors is investigated. A two-stage linear region drain current (IDlin) shift (IDlin shift increases rapidly at the beginning of stress but tends to saturate when the stress time is longer) is observed. Technology computer-aided-design simulations and direct current current-voltage measurement results suggest that the decrease of residual fabrication interface traps (NIT) leads to an initial increase in IDlin shift. On the other hand, two competing mechanisms, i.e. increase in NIT generation and increase in electron trapping, are responsible for the saturated IDlin shift when the stress time is longer.

Original languageEnglish
Pages (from-to)1751-1753
Number of pages3
JournalElectronics Letters
Volume50
Issue number23
DOIs
Publication statusPublished - 2014 Nov 6

Fingerprint

Hot carriers
Transistors
Degradation
Metals
Drain current
Voltage measurement
Electric current measurement
Computer aided design
Fabrication
Electrons
Electric potential
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Chen, Jone-Fang ; Chen, Tzu Hsiang ; Ai, Deng Ren. / Two-stage hot-carrier-induced degradation of p-type LDMOS transistors. In: Electronics Letters. 2014 ; Vol. 50, No. 23. pp. 1751-1753.
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Two-stage hot-carrier-induced degradation of p-type LDMOS transistors. / Chen, Jone-Fang; Chen, Tzu Hsiang; Ai, Deng Ren.

In: Electronics Letters, Vol. 50, No. 23, 06.11.2014, p. 1751-1753.

Research output: Contribution to journalArticle

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