Two-step epitaxial lateral overgrowth of GaN

C. H. Ko; Y. K. Su; S. J. Chang; T. Y. Tsai; T. M. Kuan; W. H. Lan; J. C. Lin; W. J. Lin; Y. T. Cherng; James B. Webb

doi:10.1016/S0254-0584(03)00228-1

Two-step epitaxial lateral overgrowth of GaN

C. H. Ko, Y. K. Su, S. J. Chang, T. Y. Tsai, T. M. Kuan, W. H. Lan, J. C. Lin, W. J. Lin, Y. T. Cherng, James B. Webb

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520 °C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO₂ stripes along 〈112̄0〉 direction, it was found that an 8min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480nm and an etch pits density (EPD) of 1.6×10⁷cm^-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample.

Original language	English
Pages (from-to)	55-60
Number of pages	6
Journal	Materials Chemistry and Physics
Volume	82
Issue number	1
DOIs	https://doi.org/10.1016/S0254-0584(03)00228-1
Publication status	Published - 2003 Sept 28

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics

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10.1016/S0254-0584(03)00228-1

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@article{1c591891f2e1475791daf5ef61333c3a,

title = "Two-step epitaxial lateral overgrowth of GaN",

abstract = "A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520 °C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along 〈11{\=2}0〉 direction, it was found that an 8min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480nm and an etch pits density (EPD) of 1.6×107cm-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample.",

author = "Ko, {C. H.} and Su, {Y. K.} and Chang, {S. J.} and Tsai, {T. Y.} and Kuan, {T. M.} and Lan, {W. H.} and Lin, {J. C.} and Lin, {W. J.} and Cherng, {Y. T.} and Webb, {James B.}",

note = "Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005. This work is also partially supported by Chung-Shan Institute of Science and Technology. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

year = "2003",

month = sep,

day = "28",

doi = "10.1016/S0254-0584(03)00228-1",

language = "English",

volume = "82",

pages = "55--60",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

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number = "1",

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TY - JOUR

T1 - Two-step epitaxial lateral overgrowth of GaN

AU - Ko, C. H.

AU - Su, Y. K.

AU - Chang, S. J.

AU - Tsai, T. Y.

AU - Kuan, T. M.

AU - Lan, W. H.

AU - Lin, J. C.

AU - Lin, W. J.

AU - Cherng, Y. T.

AU - Webb, James B.

N1 - Funding Information: This work is partially supported by National Science Council of the Republic of China under contract number NSC-88-2215-E-006-005. This work is also partially supported by Chung-Shan Institute of Science and Technology. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2003/9/28

Y1 - 2003/9/28

N2 - A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520 °C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along 〈112̄0〉 direction, it was found that an 8min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480nm and an etch pits density (EPD) of 1.6×107cm-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample.

AB - A two-step epitaxial lateral overgrowth (ELO) method was proposed to improve the quality of GaN-based epitaxial layers. In the first step, we grew a three-dimensional GaN low temperature buffer layer at 520 °C for different amount of time, and the second step is similar to conventional ELO. For two-step ELO GaN samples on SiO2 stripes along 〈112̄0〉 direction, it was found that an 8min first step growth time could provide us the highest lateral to vertical growth rate ratio and the largest angle between sidewalls and basal plane. Under such growth conditions, we could achieve a surface root-mean-square (rms) roughness of 0.480nm and an etch pits density (EPD) of 1.6×107cm-2 in the stripe regions. The surface morphology of the two-step ELO GaN sample is also much better than that of the one-step ELO GaN sample.

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VL - 82

SP - 55

EP - 60

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

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Two-step epitaxial lateral overgrowth of GaN

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