Two-step etching mechanism of Ag-Si nanostructure with various Ag nanoshape depositions

Zhan Shuo Hu, Fei Yi Hung, Shoou Jinn Chang, Kuan Jen Chen, Wen Long Wang, Sheng Joue Young, Tse Pu Chen

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Nanopattems can be structured using either dry-etching or wet-etching. In this study, Ag/Si thin film was used to prepare the nano-hollow structures using the two step selective etching method (dry-wet etching, DWE). The etching scale was controlled by the layball process and a Focus Ion Beam (FIB) was used to investigate the DWE mechanism. Increasing the beam current of dry-etching raised the height of nano prominent structures, but deteriorated the interface of Ag/Si film, and even damaged the Ag film because of Ga+ bombardment. Regardless of the Ag nanoshape deposition, the residual Ag films were doped with Ga+ and were sensitive to DWE. After wet-etching, a nano hollow formed and the Ag films sunk. However, Ago, (Ag film doped Ga ions) sidewall films formed due to the concentration gradient and the oxidative potential and this increased the volume of microporous phases, resulting in a reduction in the depth. Also, 15-30 nm Ag nano-particles were able to enhance the DWE mechanism in the Ag/Si nanostructures.

Original languageEnglish
Pages (from-to)1992-1997
Number of pages6
JournalMaterials Transactions
Volume50
Issue number8
DOIs
Publication statusPublished - 2009 Aug

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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