Types of oval defects on GaAs grown by MBE

C. T. Lee; Y. C. Chou

doi:10.1016/0022-0248(88)90383-1

Types of oval defects on GaAs grown by MBE

C. T. Lee, Y. C. Chou

Department of Photonics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

According to the shapes of oval defects, three distinguished types are observed on the MBE grown GaAs epilayers. All of their long oval axis were along the 〈110〉 direction, but their origins are attributed to different sources. The origins of each type are deduced by a series of experiments. The composition of the oval defects is similar to that of the grown epi-layers by the analysis of EDAX.

Original language	English
Pages (from-to)	169-172
Number of pages	4
Journal	Journal of Crystal Growth
Volume	91
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(88)90383-1
Publication status	Published - 1988 Aug 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/0022-0248(88)90383-1

Cite this

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Types of oval defects on GaAs grown by MBE

Abstract

All Science Journal Classification (ASJC) codes

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