Types of oval defects on GaAs grown by MBE

C. T. Lee, Y. C. Chou

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8 Citations (Scopus)


According to the shapes of oval defects, three distinguished types are observed on the MBE grown GaAs epilayers. All of their long oval axis were along the 〈110〉 direction, but their origins are attributed to different sources. The origins of each type are deduced by a series of experiments. The composition of the oval defects is similar to that of the grown epi-layers by the analysis of EDAX.

Original languageEnglish
Pages (from-to)169-172
Number of pages4
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 1988 Aug 1

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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