TY - JOUR
T1 - Ultrafast Responsive and Low-Energy-Consumption Poly(3-hexylthiophene)/Perovskite Quantum Dots Composite Film-Based Photonic Synapse
AU - Chen, Jung Yao
AU - Yang, Dong Lin
AU - Jhuang, Fu Cheng
AU - Fang, Yu Han
AU - Benas, Jean Sebastien
AU - Liang, Fang Cheng
AU - Kuo, Chi Ching
N1 - Funding Information:
The authors thank the financial aid from the Ministry of Science and Technology (MOST) in Taiwan (MOST 109‐2636‐E‐194‐001, MOST 109‐2636‐E‐006‐027, and MOST 110‐2636‐E‐006‐025). The authors gratefully acknowledge the use of JEOL JEM‐2100F Cs STEM[EM000800] of MOST 110‐2731‐M‐006‐001 belonging to the Core Facility Center of National Cheng Kung University. The authors also gratefully appreciate the Precision Instruments Center, National Sun Yat‐sen University for transmission electron microscopy analysis and National Tsing Hua University for atomic force microscope analysis. Finally, the authors thank Dr. Bi‐Hsuan Lin at National Synchrotron Radiation Research Center for the help of time‐solved photoluminescence analysis and temperature‐dependent photoluminescence measurement.
Publisher Copyright:
© 2021 Wiley-VCH GmbH
PY - 2021/11/18
Y1 - 2021/11/18
N2 - Emulation of photonic synapses through photo-recordable devices has aroused tremendous discussion owing to the low energy consumption, high parallel, and fault-tolerance in artificial neuromorphic networks. Nonvolatile flash-type photomemory with short photo-programming time, long-term storage, and linear plasticity becomes the most promising candidate. Nevertheless, the systematic studies of mechanism behind the charge transfer process in photomemory are limited. Herein, the physical properties of APbBr3 perovskite quantum dots (PQDs) on the photoresponsive characteristics of derived poly(3-hexylthiophene-2,5-diyl) (P3HT)/PQDs-based photomemory through facile A-site substitution approach are explored. Benefitting from the lowest valance band maximum and longest exciton lifetime of FAPbBr3 quantum dot (FA-QDs), P3HT/FA-QDs-derived photomemory not only exhibits shortest photoresponsive characteristic time compared to FA0.5Cs0.5PbBr3 quantum dots (Mix-QDs) and CsPbBr3 quantum dots (Cs-QDs) but also displays excellent ON/OFF current ratio of 2.2 upon an extremely short illumination duration of 1 ms. Moreover, the device not only achieves linear plasticity of synapses by optical potentiation and electric depression, but also successfully emulates the features of photon synaptic such as pair-pulse facilitation, long-term plasticity, and multiple spike-dependent plasticity and exhibits extremely low energy consumption of 3 × 10−17 J per synaptic event.
AB - Emulation of photonic synapses through photo-recordable devices has aroused tremendous discussion owing to the low energy consumption, high parallel, and fault-tolerance in artificial neuromorphic networks. Nonvolatile flash-type photomemory with short photo-programming time, long-term storage, and linear plasticity becomes the most promising candidate. Nevertheless, the systematic studies of mechanism behind the charge transfer process in photomemory are limited. Herein, the physical properties of APbBr3 perovskite quantum dots (PQDs) on the photoresponsive characteristics of derived poly(3-hexylthiophene-2,5-diyl) (P3HT)/PQDs-based photomemory through facile A-site substitution approach are explored. Benefitting from the lowest valance band maximum and longest exciton lifetime of FAPbBr3 quantum dot (FA-QDs), P3HT/FA-QDs-derived photomemory not only exhibits shortest photoresponsive characteristic time compared to FA0.5Cs0.5PbBr3 quantum dots (Mix-QDs) and CsPbBr3 quantum dots (Cs-QDs) but also displays excellent ON/OFF current ratio of 2.2 upon an extremely short illumination duration of 1 ms. Moreover, the device not only achieves linear plasticity of synapses by optical potentiation and electric depression, but also successfully emulates the features of photon synaptic such as pair-pulse facilitation, long-term plasticity, and multiple spike-dependent plasticity and exhibits extremely low energy consumption of 3 × 10−17 J per synaptic event.
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U2 - 10.1002/adfm.202105911
DO - 10.1002/adfm.202105911
M3 - Article
AN - SCOPUS:85112645205
SN - 1616-301X
VL - 31
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 47
M1 - 2105911
ER -
