TY - JOUR
T1 - Ultrafast Responsive Non-Volatile Flash Photomemory via Spatially Addressable Perovskite/Block Copolymer Composite Film
AU - Chang, Yu Hsiang
AU - Ku, Chia Wei
AU - Zhang, Yi Hua
AU - Wang, Hsiang Chen
AU - Chen, Jung Yao
N1 - Funding Information:
The authors thank the financial support from the Ministry of Science and Technology (MOST) in Taiwan (MOST 108-2636-E-194-001 and MOST 109-2636-E-194-001) and the Advanced Institute of Manufacturing with High-tech Innovations from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The authors also gratefully appreciate the Center for Micro/Nano Science and Technology, National Cheng Kung University, for the transmission electron microscopy analysis and Dr. Bi-Hsuan Lin at National Synchrotron Radiation Research Center for the help of time-solved photoluminescence analysis.
Funding Information:
The authors thank the financial support from the Ministry of Science and Technology (MOST) in Taiwan (MOST 108‐2636‐E‐194‐001 and MOST 109‐2636‐E‐194‐001) and the Advanced Institute of Manufacturing with High‐tech Innovations from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. The authors also gratefully appreciate the Center for Micro/Nano Science and Technology, National Cheng Kung University, for the transmission electron microscopy analysis and Dr. Bi‐Hsuan Lin at National Synchrotron Radiation Research Center for the help of time‐solved photoluminescence analysis.
Publisher Copyright:
© 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2020/5/1
Y1 - 2020/5/1
N2 - The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti-solvent functionalities of the perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns−1, high charge transfer efficiency of 89%, ON/OFF current ratio of 104, and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.
AB - The exotic photophysical properties of organic–inorganic hybrid perovskite with long exciton lifetimes and small binding energy have appeared as promising front-runners for next-generation non-volatile flash photomemory. However, the long photo-programming time of photomemory limits its application on light-fidelity (Li-Fi), which requires high storage capacity and short programming times. Herein, the spatially addressable perovskite in polystyrene-block-poly(ethylene oxide) (PS-b-PEO)/perovskite composite film as an photoactive floating gate is demonstrated to elucidate the effect of morphology on the photo-responsive characteristics of photomemory. The chelation between lead ion and PEO segment promotes the anti-solvent functionalities of the perovskite/PS-b-PEO composite film, thus allowing the solution-processable poly(3-hexylthiophene-2,5-diyl) (P3HT) to act as the active channel. Through manipulating the interfacial area between perovskite and P3HT, fast photo-induced charge transfer rate of 0.056 ns−1, high charge transfer efficiency of 89%, ON/OFF current ratio of 104, and extremely low programming time of 5 ms can be achieved. This solution-processable and fast photo-programmable non-volatile flash photomemory can trigger the practical application on Li-Fi.
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U2 - 10.1002/adfm.202000764
DO - 10.1002/adfm.202000764
M3 - Article
AN - SCOPUS:85082958715
SN - 1616-301X
VL - 30
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 21
M1 - 2000764
ER -