An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.
|Number of pages||3|
|Journal||IEEE Electron Device Letters|
|Publication status||Published - 2011 Mar|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering