Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

Pei Ying Lai; Jen Sue Chen

doi:10.1109/LED.2010.2099102

Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

Pei Ying Lai, Jen Sue Chen

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

An ultrahigh on/off -current ratio of 5×10⁹ is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.

Original language	English
Article number	5704541
Pages (from-to)	387-389
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	3
DOIs	https://doi.org/10.1109/LED.2010.2099102
Publication status	Published - 2011 Mar

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2010.2099102

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title = "Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer",

abstract = "An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.",

author = "Lai, {Pei Ying} and Chen, {Jen Sue}",

note = "Funding Information: Manuscript received November 26, 2010; accepted November 30, 2010. Date of publication January 31, 2011; date of current version February 23, 2011. This work was supported in part by the National Science Council of Taiwan under Grant NSC-96-2628-E-006-013-MY3, by National Cheng Kung University Landmark Project A0051, and by the Applied Materials Taiwan. The review of this letter was arranged by Editor S. Kawamura.",

year = "2011",

month = mar,

doi = "10.1109/LED.2010.2099102",

language = "English",

volume = "32",

pages = "387--389",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Lai, Pei Ying

AU - Chen, Jen Sue

N1 - Funding Information: Manuscript received November 26, 2010; accepted November 30, 2010. Date of publication January 31, 2011; date of current version February 23, 2011. This work was supported in part by the National Science Council of Taiwan under Grant NSC-96-2628-E-006-013-MY3, by National Cheng Kung University Landmark Project A0051, and by the Applied Materials Taiwan. The review of this letter was arranged by Editor S. Kawamura.

PY - 2011/3

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N2 - An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.

AB - An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.

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JF - IEEE Electron Device Letters

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Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

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