Ultrahigh on/off -current ratio for resistive memory devices with poly(N-Vinylcarbazole)/poly(3, 4-ethylenedioxythiophene)poly(styrenesulfonate) stacking bilayer

Pei Ying Lai, Jen Sue Chen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

An ultrahigh on/off -current ratio of 5×109 is presented in a resistive memory device using Au nanoparticles (Au NPs)-incorporated poly(N-vinylcarbazole) (PVK) and poly(3, 4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOTPSS) stacking configurations as the active layer and Al as electrodes for nonvolatile-memory application. The investigation also suggests that the enhancement of the on/off-current ratio cannot be achieved by simply increasing the thickness of the PVK:Au NPs layer itself. This PVK:Au-NPs/PEDOTPSS stacking-bilayer memory device also demonstrates good retention of high on /off-current ratio for at least 2 h and remains programmable at 125 °C.

Original languageEnglish
Article number5704541
Pages (from-to)387-389
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number3
DOIs
Publication statusPublished - 2011 Mar 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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