Ultrananocrystalline diamond nano-pillars synthesized by microwave plasma bias-enhanced nucleation and bias-enhanced growth in hydrogen-diluted methane

Yueh Chieh Chu, Chia Hao Tu, Chuan-Pu Liu, Yon-Hua Tzeng, Orlando Auciello

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Bias-enhanced nucleation and growth of ultrananocrystalline diamond (UNCD) nano-pillars on silicon substrates by low-pressure microwave plasma chemical vapor deposition in a hydrogen-rich gas mixture with methane is reported. Direct-current biasing of the substrate in a constant-current mode is applied to substrates, which are pre-heated to 800 °C, to result in a negative bias voltage of greater than 350 V throughout the nucleation and growth process. Self-masking by UNCD clusters, angle dependent sputtering of UNCD clusters, and ion-assisted chemical vapor deposition by bias enhanced bombardment of energetic ions are attributed to the formation of UNCD nano-pillars. High-resolution transmission electron microscopy analysis indicates that an interfacial layer exists between the silicon substrate and the UNCD nano-pillars. The porous UNCD film with high-density nano-pillars exhibits excellent optical anti-reflectivity and improved electron field emission characteristics compared to smooth and solid UNCD films.

Original languageEnglish
Article number124307
JournalJournal of Applied Physics
Volume112
Issue number12
DOIs
Publication statusPublished - 2012 Dec 1

Fingerprint

methane
diamonds
nucleation
microwaves
hydrogen
diamond films
vapor deposition
silicon
masking
electron emission
gas mixtures
bombardment
field emission
ions
low pressure
sputtering
direct current
reflectance
transmission electron microscopy
high resolution

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Ultrananocrystalline diamond nano-pillars synthesized by microwave plasma bias-enhanced nucleation and bias-enhanced growth in hydrogen-diluted methane",
abstract = "Bias-enhanced nucleation and growth of ultrananocrystalline diamond (UNCD) nano-pillars on silicon substrates by low-pressure microwave plasma chemical vapor deposition in a hydrogen-rich gas mixture with methane is reported. Direct-current biasing of the substrate in a constant-current mode is applied to substrates, which are pre-heated to 800 °C, to result in a negative bias voltage of greater than 350 V throughout the nucleation and growth process. Self-masking by UNCD clusters, angle dependent sputtering of UNCD clusters, and ion-assisted chemical vapor deposition by bias enhanced bombardment of energetic ions are attributed to the formation of UNCD nano-pillars. High-resolution transmission electron microscopy analysis indicates that an interfacial layer exists between the silicon substrate and the UNCD nano-pillars. The porous UNCD film with high-density nano-pillars exhibits excellent optical anti-reflectivity and improved electron field emission characteristics compared to smooth and solid UNCD films.",
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Ultrananocrystalline diamond nano-pillars synthesized by microwave plasma bias-enhanced nucleation and bias-enhanced growth in hydrogen-diluted methane. / Chu, Yueh Chieh; Tu, Chia Hao; Liu, Chuan-Pu; Tzeng, Yon-Hua; Auciello, Orlando.

In: Journal of Applied Physics, Vol. 112, No. 12, 124307, 01.12.2012.

Research output: Contribution to journalArticle

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AU - Chu, Yueh Chieh

AU - Tu, Chia Hao

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AU - Tzeng, Yon-Hua

AU - Auciello, Orlando

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N2 - Bias-enhanced nucleation and growth of ultrananocrystalline diamond (UNCD) nano-pillars on silicon substrates by low-pressure microwave plasma chemical vapor deposition in a hydrogen-rich gas mixture with methane is reported. Direct-current biasing of the substrate in a constant-current mode is applied to substrates, which are pre-heated to 800 °C, to result in a negative bias voltage of greater than 350 V throughout the nucleation and growth process. Self-masking by UNCD clusters, angle dependent sputtering of UNCD clusters, and ion-assisted chemical vapor deposition by bias enhanced bombardment of energetic ions are attributed to the formation of UNCD nano-pillars. High-resolution transmission electron microscopy analysis indicates that an interfacial layer exists between the silicon substrate and the UNCD nano-pillars. The porous UNCD film with high-density nano-pillars exhibits excellent optical anti-reflectivity and improved electron field emission characteristics compared to smooth and solid UNCD films.

AB - Bias-enhanced nucleation and growth of ultrananocrystalline diamond (UNCD) nano-pillars on silicon substrates by low-pressure microwave plasma chemical vapor deposition in a hydrogen-rich gas mixture with methane is reported. Direct-current biasing of the substrate in a constant-current mode is applied to substrates, which are pre-heated to 800 °C, to result in a negative bias voltage of greater than 350 V throughout the nucleation and growth process. Self-masking by UNCD clusters, angle dependent sputtering of UNCD clusters, and ion-assisted chemical vapor deposition by bias enhanced bombardment of energetic ions are attributed to the formation of UNCD nano-pillars. High-resolution transmission electron microscopy analysis indicates that an interfacial layer exists between the silicon substrate and the UNCD nano-pillars. The porous UNCD film with high-density nano-pillars exhibits excellent optical anti-reflectivity and improved electron field emission characteristics compared to smooth and solid UNCD films.

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