TY - JOUR
T1 - Ultrasensitive ambient-stable SnSe2-based broadband photodetectors for room-temperature IR/THz energy conversion and imaging
AU - Guo, Cheng
AU - Guo, Wanlong
AU - Xu, Huang
AU - Zhang, Libo
AU - Chen, Gang
AU - D'Olimpio, Gianluca
AU - Kuo, Chia Nung
AU - Lue, Chin Shan
AU - Wang, Lin
AU - Politano, Antonio
AU - Chen, Xiaoshuang
AU - Lu, Wei
N1 - Publisher Copyright:
© 2020 IOP Publishing Ltd.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2020/7
Y1 - 2020/7
N2 - The advent of tin diselenide (SnSe2) enables novel pathways for optoelectronics, due to its reduced cost, ultralow thermal conductivity and high potential for thermoelectricity. To date, SnSe2-based optoelectronic devices have been focused on the visible and infrared range of the electromagnetic spectrum, with efficiency sharply decreasing at longer wavelength. Here, we present SnSe2 photodetectors with exfoliated SnSe2 nanosheets extended in the range of THz frequency, exhibiting high responsivity (170 V W-1), fast speed (2.2 μs), as well as room-temperature operation, based on efficient production of hotelectrons under deep-subwavelength electromagnetic focus, which outperform thermal-based photodetectors. Our SnSe2-based detectors show high-contrast imaging from terahertz (THz) up to visible. The outstanding ambient stability of our broadband photodetectors in a timescale of months is due to the chemical inertness of stoichiometric SnSe2 crystals, validated by surface-science experiments. Our results demonstrate the suitability of SnSe2for multispectral sensing and real-time imaging.
AB - The advent of tin diselenide (SnSe2) enables novel pathways for optoelectronics, due to its reduced cost, ultralow thermal conductivity and high potential for thermoelectricity. To date, SnSe2-based optoelectronic devices have been focused on the visible and infrared range of the electromagnetic spectrum, with efficiency sharply decreasing at longer wavelength. Here, we present SnSe2 photodetectors with exfoliated SnSe2 nanosheets extended in the range of THz frequency, exhibiting high responsivity (170 V W-1), fast speed (2.2 μs), as well as room-temperature operation, based on efficient production of hotelectrons under deep-subwavelength electromagnetic focus, which outperform thermal-based photodetectors. Our SnSe2-based detectors show high-contrast imaging from terahertz (THz) up to visible. The outstanding ambient stability of our broadband photodetectors in a timescale of months is due to the chemical inertness of stoichiometric SnSe2 crystals, validated by surface-science experiments. Our results demonstrate the suitability of SnSe2for multispectral sensing and real-time imaging.
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U2 - 10.1088/2053-1583/ab8ec0
DO - 10.1088/2053-1583/ab8ec0
M3 - Article
AN - SCOPUS:85089018375
VL - 7
JO - 2D Materials
JF - 2D Materials
SN - 2053-1583
IS - 3
M1 - 035026
ER -