TY - JOUR
T1 - Ultrasensitive Self-Driven Terahertz Photodetectors Based on Low-Energy Type-II Dirac Fermions and Related Van der Waals Heterojunctions
AU - Zhang, Kaixuan
AU - Hu, Zhen
AU - Zhang, Libo
AU - Chen, Yulu
AU - Wang, Dong
AU - Jiang, Mengjie
AU - D'Olimpio, Gianluca
AU - Han, Li
AU - Yao, Chenyu
AU - Chen, Zhiqingzi
AU - Xing, Huaizhong
AU - Kuo, Chia Nung
AU - Lue, Chin Shan
AU - Vobornik, Ivana
AU - Wang, Shao Wei
AU - Politano, Antonio
AU - Hu, Weida
AU - Wang, Lin
AU - Chen, Xiaoshuang
AU - Lu, Wei
N1 - Publisher Copyright:
© 2022 Wiley-VCH GmbH.
PY - 2023/1/4
Y1 - 2023/1/4
N2 - The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low-energy photonics. Here, low-energy type-II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal-topological semimetal-metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W−1, with a response time of 0.6 µs, a noise-equivalent power of 18 pW Hz−0.5, with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self-powered, low-power, room-temperature, and ultrafast THz detection.
AB - The exotic electronic properties of topological semimetals (TSs) have opened new pathways for innovative photonic and optoelectronic devices, especially in the highly pursuit terahertz (THz) band. However, in most cases Dirac fermions lay far above or below the Fermi level, thus hindering their successful exploitation for the low-energy photonics. Here, low-energy type-II Dirac fermions in kitkaite (NiTeSe) for ultrasensitive THz detection through metal-topological semimetal-metal heterostructures are exploited. Furthermore, a heterostructure combining two Dirac materials, namely, graphene and NiTeSe, is implemented for a novel photodetector exhibiting a responsivity as high as 1.22 A W−1, with a response time of 0.6 µs, a noise-equivalent power of 18 pW Hz−0.5, with outstanding stability in the ambient conditions. This work brings to fruition of Dirac fermiology in THz technology, enabling self-powered, low-power, room-temperature, and ultrafast THz detection.
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U2 - 10.1002/smll.202205329
DO - 10.1002/smll.202205329
M3 - Article
C2 - 36344449
AN - SCOPUS:85141524852
SN - 1613-6810
VL - 19
JO - Small
JF - Small
IS - 1
M1 - 2205329
ER -