Ultrasensitive Thin-Film-Based Al x Ga 1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential

Chao Hung Wang, Kun Yu Lai, Yi Chang Li, Yen Chih Chen, Chuan-Pu Liu

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Al x Ga 1-x N thin-film-based piezotronic strain sensors with ultrahigh strain sensitivity are fabricated through alloying of AlN with GaN. The strain sensitivity of the ternary compound Al x Ga 1-x N is higher than those of the individual binary compounds GaN and AlN. Such a high performance can be attributed to the piezoelectric constant enhancement via intercalation of Al atoms into the GaN matrix, the effect of residual strain, and a suppressed screening effect.

Original languageEnglish
Pages (from-to)6289-6295
Number of pages7
JournalAdvanced Materials
Volume27
Issue number40
DOIs
Publication statusPublished - 2015 Oct 1

Fingerprint

Alloying
Thin films
Sensors
Intercalation
Screening
Atoms

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Wang, Chao Hung ; Lai, Kun Yu ; Li, Yi Chang ; Chen, Yen Chih ; Liu, Chuan-Pu. / Ultrasensitive Thin-Film-Based Al x Ga 1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential In: Advanced Materials. 2015 ; Vol. 27, No. 40. pp. 6289-6295.
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Ultrasensitive Thin-Film-Based Al x Ga 1-x N Piezotronic Strain Sensors via Alloying-Enhanced Piezoelectric Potential . / Wang, Chao Hung; Lai, Kun Yu; Li, Yi Chang; Chen, Yen Chih; Liu, Chuan-Pu.

In: Advanced Materials, Vol. 27, No. 40, 01.10.2015, p. 6289-6295.

Research output: Contribution to journalArticle

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