Ultrathin (Bi1-xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio

Yu Hung Liu, Cheong Wei Chong, Chun Ming FanChiang, Jung Chun Andrew Huang, Hsieh Cheng Han, Zhongjun Li, Huaili Qiu, Yi Chang Li, Chuan Pu Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1-xSbx)2Se3 ultrathin films were fabricated on SrTiO3 substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.

Original languageEnglish
Pages (from-to)12859-12864
Number of pages6
JournalACS Applied Materials and Interfaces
Volume9
Issue number14
DOIs
Publication statusPublished - 2017 Apr 12

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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