TY - JOUR
T1 - Ultrathin Cr added Ru film as a seedless Cu diffusion barrier for advanced Cu interconnects
AU - Hsu, Kuo Chung
AU - Perng, Dung Ching
AU - Yeh, Jia Bin
AU - Wang, Yi Chun
N1 - Funding Information:
The authors would like to thank the CRD thin film group of United Microelectronic Co. for p-SiOCH film deposition. The funding support of the National Science Council of Taiwan under contract no. NSC 99-2221-E-006-138 is acknowledged.
PY - 2012/7/1
Y1 - 2012/7/1
N2 - A 5 nm thick Cr added Ru film has been extensively investigated as a seedless Cu diffusion barrier. High-resolution transmission electron microscopy micrograph, X-ray diffraction (XRD) pattern and Fourier transform-electron diffraction pattern reveal that a Cr contained Ru (RuCr) film has a glassy microstructure and is an amorphous-like film. XRD patterns and sheet resistance data show that the RuCr film is stable up to 650 °C, which is approximately a 200 °C improvement in thermal stability as compared to that of the pure Ru film. X-ray photoelectron spectroscopy depth profiles show that the RuCr film can successfully block Cu diffusion, even after a 30-min 650 °C annealing. The leakage current of the Cu/5 nm RuCr/porous SiOCH/Si stacked structure is about two orders of magnitude lower than that of a pristine Ru sample for electric field below 1 MV/cm. The RuCr film can be a promising Cu diffusion barrier for advanced Cu metallization.
AB - A 5 nm thick Cr added Ru film has been extensively investigated as a seedless Cu diffusion barrier. High-resolution transmission electron microscopy micrograph, X-ray diffraction (XRD) pattern and Fourier transform-electron diffraction pattern reveal that a Cr contained Ru (RuCr) film has a glassy microstructure and is an amorphous-like film. XRD patterns and sheet resistance data show that the RuCr film is stable up to 650 °C, which is approximately a 200 °C improvement in thermal stability as compared to that of the pure Ru film. X-ray photoelectron spectroscopy depth profiles show that the RuCr film can successfully block Cu diffusion, even after a 30-min 650 °C annealing. The leakage current of the Cu/5 nm RuCr/porous SiOCH/Si stacked structure is about two orders of magnitude lower than that of a pristine Ru sample for electric field below 1 MV/cm. The RuCr film can be a promising Cu diffusion barrier for advanced Cu metallization.
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U2 - 10.1016/j.apsusc.2012.04.046
DO - 10.1016/j.apsusc.2012.04.046
M3 - Article
AN - SCOPUS:84861095951
SN - 0169-4332
VL - 258
SP - 7225
EP - 7230
JO - Applied Surface Science
JF - Applied Surface Science
IS - 18
ER -