Ultraviolet electroluminescence from ZnO-based n-i-p light-emitting diodes

Ching Ting Lee, Jheng Tai Yan

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


The p-type ZnO films were obtained using codeposition of ZnO and LiNO 3 sources by the vapor cooling condensation system. With an adequate postannealing temperature, the p-type conductive behaviors of the resulting ZnO films could be achieved due to the activation of Li-N dual acceptor. According to the emission energy of free electron to acceptor hole level, the acceptor binding energy of 137 meV was obtained. Furthermore, the ZnO-based n-i-p ultraviolet light-emitting diodes were deposited on sapphire substrates using the vapor cooling condensation system. A rectifying diode-like behavior and ultraviolet emission were observed from the ZnO-based n-i-p light-emitting diodes.

Original languageEnglish
Article number5682388
Pages (from-to)353-355
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number6
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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