@inproceedings{f6a8463821bb4a598bc008a30e860b8e,
title = "Ultraviolet light emitting diodes based on hydrothermal grown crystalline n-ZnO on p-GaN film",
abstract = "The growth of single crystalline ZnO film on p-GaN using the hydrothermal method is proposed and its application on n-ZnO/p-GaN heterojunction light emitting diodes (HJ-LED) is demonstrated. The effect of thermal annealing in the nitrogen ambient on the optical and electrical properties of hydrothermally grown ZnO film (HTG-ZnO film) onto a p-GaN substrate is investigated. The current-voltage (I-V) curves in darkness show that the prepared n-HTG-ZnO film/p-GaN HJ with thermal annealing has good rectifying characteristics and a 150% improvement in leakage current at -4 V has been achieved for the n-ZnO/p-GaN with thermal annealing. Strong ultraviolet lights emission from the annealed n-ZnO/p-GaN HJ-LED at around 375 nm without defect-related emissions in the visible region are observed from electroluminescence (EL) spectra.",
author = "Tu, {Yung Chun} and Wang, {Shui Jinn} and Lin, {Tseng Hsing} and Hung, {Chien Hsiung} and Wu, {Cheng Han} and You, {Zong Sian}",
note = "Funding Information: This work was supported by the National Science Council (NSC) of Taiwan, under Contract No. NSC 102-222l-E-006-217-MY2 and the Ministry of Science and Technology (MOST) of Taiwan, under Grant MOST l03-2221-E-006-132. Publisher Copyright: {\textcopyright} 2015 IEEE.; 73rd Annual Device Research Conference, DRC 2015 ; Conference date: 21-06-2015 Through 24-06-2015",
year = "2015",
month = aug,
day = "3",
doi = "10.1109/DRC.2015.7175609",
language = "English",
series = "Device Research Conference - Conference Digest, DRC",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "167--168",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
address = "United States",
}