Ultraviolet light emitting diodes based on hydrothermal grown crystalline n-ZnO on p-GaN film

Yung Chun Tu, Shui Jinn Wang, Tseng Hsing Lin, Chien Hsiung Hung, Cheng Han Wu, Zong Sian You

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The growth of single crystalline ZnO film on p-GaN using the hydrothermal method is proposed and its application on n-ZnO/p-GaN heterojunction light emitting diodes (HJ-LED) is demonstrated. The effect of thermal annealing in the nitrogen ambient on the optical and electrical properties of hydrothermally grown ZnO film (HTG-ZnO film) onto a p-GaN substrate is investigated. The current-voltage (I-V) curves in darkness show that the prepared n-HTG-ZnO film/p-GaN HJ with thermal annealing has good rectifying characteristics and a 150% improvement in leakage current at -4 V has been achieved for the n-ZnO/p-GaN with thermal annealing. Strong ultraviolet lights emission from the annealed n-ZnO/p-GaN HJ-LED at around 375 nm without defect-related emissions in the visible region are observed from electroluminescence (EL) spectra.

Original languageEnglish
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages167-168
Number of pages2
ISBN (Electronic)9781467381345
DOIs
Publication statusPublished - 2015 Aug 3
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: 2015 Jun 212015 Jun 24

Publication series

NameDevice Research Conference - Conference Digest, DRC
Volume2015-August
ISSN (Print)1548-3770

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period15-06-2115-06-24

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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