Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

Rong Ming Ko; Wei Ting Chen; Hao Che Cheng; Chien Hung Wu; Chao Yen Chang; Shui Jinn Wang

doi:10.35848/1347-4065/aca33c

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

Rong Ming Ko, Wei Ting Chen, Hao Che Cheng, Chien Hung Wu, Chao Yen Chang, Shui Jinn Wang

Research output: Contribution to journal › Article › peer-review

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Abstract

Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I _dark) and photocurrent (I _ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30 nm thick upper layer stacked on a 50 nm thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A W⁻¹ and 1.03 × 10⁷ A A⁻¹, which is about 272 and 137 times higher than conventional 30 nm thick single-channel layer SZTO TFT.

Original language	English
Article number	SC1006
Journal	Japanese journal of applied physics
Volume	62
Issue number	SC
DOIs	https://doi.org/10.35848/1347-4065/aca33c
Publication status	Published - 2023 Apr 1

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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@article{c6419b64fa2a4a499f66073fc822599d,

title = "Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer",

abstract = "Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I dark) and photocurrent (I ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30 nm thick upper layer stacked on a 50 nm thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A W−1 and 1.03 × 107 A A−1, which is about 272 and 137 times higher than conventional 30 nm thick single-channel layer SZTO TFT.",

author = "Ko, {Rong Ming} and Chen, {Wei Ting} and Cheng, {Hao Che} and Wu, {Chien Hung} and Chang, {Chao Yen} and Wang, {Shui Jinn}",

note = "Funding Information: This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under contract No. MOST 111-2221-E-006-048-. The authors would like to thank Ms. Hui-Jung Shih with the Instrument Center of National Cheng Kung University for supporting facilities for material analysis. Publisher Copyright: {\textcopyright} 2022 The Japan Society of Applied Physics.",

year = "2023",

month = apr,

day = "1",

doi = "10.35848/1347-4065/aca33c",

language = "English",

volume = "62",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

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TY - JOUR

T1 - Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

AU - Ko, Rong Ming

AU - Chen, Wei Ting

AU - Cheng, Hao Che

AU - Wu, Chien Hung

AU - Chang, Chao Yen

AU - Wang, Shui Jinn

N1 - Funding Information: This work was supported by the Ministry of Science and Technology (MOST), Taiwan, under contract No. MOST 111-2221-E-006-048-. The authors would like to thank Ms. Hui-Jung Shih with the Instrument Center of National Cheng Kung University for supporting facilities for material analysis. Publisher Copyright: © 2022 The Japan Society of Applied Physics.

PY - 2023/4/1

Y1 - 2023/4/1

N2 - Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I dark) and photocurrent (I ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30 nm thick upper layer stacked on a 50 nm thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A W−1 and 1.03 × 107 A A−1, which is about 272 and 137 times higher than conventional 30 nm thick single-channel layer SZTO TFT.

AB - Ultraviolet photodetectors (UVPDs) based on Si-Zn-SnO (SZTO) thin-film transistors (TFTs) with a stacked dual-channel layer (DCL) structure with different carrier concentration and NiO capping layer (CL) to alleviate the trade-off between dark current (I dark) and photocurrent (I ph) are reported. Experimental results show that under 275 nm irradiation, the proposed SZTO TFT UVPD with a 30 nm thick upper layer stacked on a 50 nm thick channel layer and a patterned NiO CL exhibit excellent photoresponsivity and photosensitivity up to 1672 A W−1 and 1.03 × 107 A A−1, which is about 272 and 137 times higher than conventional 30 nm thick single-channel layer SZTO TFT.

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SN - 0021-4922

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JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - SC

M1 - SC1006

ER -

Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer

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