Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires

Cheng Liang Hsu; Shoou Jinn Chang; Yan Ru Lin; Pin Chou Li; Tzer Shen Lin; Song Yeu Tsai; Tsung Heng Lu; I. Cherng Chen

doi:10.1016/j.cplett.2005.09.066

Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires

Cheng Liang Hsu, Shoou Jinn Chang, Yan Ru Lin, Pin Chou Li, Tzer Shen Lin, Song Yeu Tsai, Tsung Heng Lu, I. Cherng Chen

Research output: Contribution to journal › Article › peer-review

117 Citations (Scopus)

Abstract

Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template by self-catalyzed vapor-liquid-solid (VLS) process at a low temperature of 520 °C. It was found that length of these ZnO nanowires was around 2.0 μm while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5.

Original language	English
Pages (from-to)	75-78
Number of pages	4
Journal	Chemical Physics Letters
Volume	416
Issue number	1-3
DOIs	https://doi.org/10.1016/j.cplett.2005.09.066
Publication status	Published - 2005 Nov 29

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)
Physical and Theoretical Chemistry

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title = "Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires",

abstract = "Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template by self-catalyzed vapor-liquid-solid (VLS) process at a low temperature of 520 °C. It was found that length of these ZnO nanowires was around 2.0 μm while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5.",

author = "Hsu, {Cheng Liang} and Chang, {Shoou Jinn} and Lin, {Yan Ru} and Li, {Pin Chou} and Lin, {Tzer Shen} and Tsai, {Song Yeu} and Lu, {Tsung Heng} and Chen, {I. Cherng}",

year = "2005",

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language = "English",

volume = "416",

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journal = "Chemical Physics Letters",

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T1 - Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires

AU - Hsu, Cheng Liang

AU - Chang, Shoou Jinn

AU - Lin, Yan Ru

AU - Li, Pin Chou

AU - Lin, Tzer Shen

AU - Tsai, Song Yeu

AU - Lu, Tsung Heng

AU - Chen, I. Cherng

PY - 2005/11/29

Y1 - 2005/11/29

N2 - Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template by self-catalyzed vapor-liquid-solid (VLS) process at a low temperature of 520 °C. It was found that length of these ZnO nanowires was around 2.0 μm while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5.

AB - Vertical single-crystal ZnO nanowires of were grown on ZnO:Ga/glass template by self-catalyzed vapor-liquid-solid (VLS) process at a low temperature of 520 °C. It was found that length of these ZnO nanowires was around 2.0 μm while the diameter of these nanowires was in between 70 and 150 nm. It was also found that the ZnO nanowires were structurally uniform, defect free and well oriented with pure wurtzite structure. UV photodetectors were then fabricated using a simple scheme. It was found that photocurrent to dark current contrast ratio of our ZnO nanowires photodetector was 67.5.

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Ultraviolet photodetectors with low temperature synthesized vertical ZnO nanowires

Abstract

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