Ultraviolet ZnO nanorod/P-GaN-heterostructured light-emitting diodes

Jheng Tai Yan, Chia Hsun Chen, Shiu Fang Yen, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Both i-ZnO and n-ZnO:In nanorod arrays were grown on a p-GaN layer with an anodic alumina membrane template using a vapor cooling condensation method. Electroluminescence emissions were observed from the resulting p-n (p-GaN/n-ZnO:In nanorod array) and p-i-n (p-GaN/i-ZnO nanorod array/n-ZnO:In nanorod array) heterostructured light-emitting diodes (LEDs). The ultraviolet emission peak at 386 nm observed in the p-i-n heterostructured LEDs was attributed to radiative recombination of the near-band edge in the i-ZnO nanorods. Using power-law fitted currentvoltage relationships, it was shown that a space-charge-limited current and associated effects occurred in the p-n and p-i-n nanorod heterostructured LEDs.

Original languageEnglish
Article number5342485
Pages (from-to)146-148
Number of pages3
JournalIEEE Photonics Technology Letters
Volume22
Issue number3
DOIs
Publication statusPublished - 2010 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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