Abstract
Both i-ZnO and n-ZnO:In nanorod arrays were grown on a p-GaN layer with an anodic alumina membrane template using a vapor cooling condensation method. Electroluminescence emissions were observed from the resulting p-n (p-GaN/n-ZnO:In nanorod array) and p-i-n (p-GaN/i-ZnO nanorod array/n-ZnO:In nanorod array) heterostructured light-emitting diodes (LEDs). The ultraviolet emission peak at 386 nm observed in the p-i-n heterostructured LEDs was attributed to radiative recombination of the near-band edge in the i-ZnO nanorods. Using power-law fitted currentvoltage relationships, it was shown that a space-charge-limited current and associated effects occurred in the p-n and p-i-n nanorod heterostructured LEDs.
Original language | English |
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Article number | 5342485 |
Pages (from-to) | 146-148 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 22 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2010 Feb 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering