Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

Chia Fong Du, Chen Hui Lee, Chao Tsung Cheng, Kai Hsiang Lin, Jin Kong Sheu, Hsu Cheng Hsu

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17 Citations (Scopus)


We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

Original languageEnglish
Article number446
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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