Unambiguous photoreflectance determination of electric fields using phase suppression

S. L. Tyan; Y. C. Wang; J. S. Hwang; H. Shen

doi:10.1063/1.115790

Unambiguous photoreflectance determination of electric fields using phase suppression

S. L. Tyan, Y. C. Wang, J. S. Hwang, H. Shen

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Photoreflectance measurements have been performed on a δ-doped GaAs homojunction. Two Franz-Keldysh oscillation features originating from two different regions (a buffer layer and a top layer) of the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase, one of the features can be suppressed, thus enabling us to determine the electric fields from the two regions unambiguously. The electric field in the top layer is 3.5±0.2×105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2±0.1×104 V/cm.

Original language	English
Pages (from-to)	3452-3454
Number of pages	3
Journal	Applied Physics Letters
Volume	68
Issue number	24
DOIs	https://doi.org/10.1063/1.115790
Publication status	Published - 1996

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.115790

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title = "Unambiguous photoreflectance determination of electric fields using phase suppression",

abstract = "Photoreflectance measurements have been performed on a δ-doped GaAs homojunction. Two Franz-Keldysh oscillation features originating from two different regions (a buffer layer and a top layer) of the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase, one of the features can be suppressed, thus enabling us to determine the electric fields from the two regions unambiguously. The electric field in the top layer is 3.5±0.2×105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2±0.1×104 V/cm.",

author = "Tyan, {S. L.} and Wang, {Y. C.} and Hwang, {J. S.} and H. Shen",

year = "1996",

doi = "10.1063/1.115790",

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pages = "3452--3454",

journal = "Applied Physics Letters",

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AU - Tyan, S. L.

AU - Wang, Y. C.

AU - Hwang, J. S.

AU - Shen, H.

PY - 1996

Y1 - 1996

N2 - Photoreflectance measurements have been performed on a δ-doped GaAs homojunction. Two Franz-Keldysh oscillation features originating from two different regions (a buffer layer and a top layer) of the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase, one of the features can be suppressed, thus enabling us to determine the electric fields from the two regions unambiguously. The electric field in the top layer is 3.5±0.2×105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2±0.1×104 V/cm.

AB - Photoreflectance measurements have been performed on a δ-doped GaAs homojunction. Two Franz-Keldysh oscillation features originating from two different regions (a buffer layer and a top layer) of the structure superimpose with each other in the photoreflectance spectrum. By properly selecting the reference phase, one of the features can be suppressed, thus enabling us to determine the electric fields from the two regions unambiguously. The electric field in the top layer is 3.5±0.2×105 V/cm, which is in good agreement with theoretical calculation. The electric field in the buffer layer is 1.2±0.1×104 V/cm.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Unambiguous photoreflectance determination of electric fields using phase suppression

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