Uncooled low-voltage AIGaAsSb/LnGaAsSb/GaSB avalanche photodetectors

O. V. Sulima; M. G. Mauk; Z. A. Shellenbarger; J. A. Cox; J. V. Li; P. E. Sims; S. Datta; S. B. Rafol

doi:10.1049/ip-opt:20040142

Uncooled low-voltage AIGaAsSb/LnGaAsSb/GaSB avalanche photodetectors

O. V. Sulima, M. G. Mauk, Z. A. Shellenbarger, J. A. Cox, J. V. Li, P. E. Sims, S. Datta, S. B. Rafol

Department of Aeronautics and Astronautics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/ GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	IEE Proceedings: Optoelectronics
Volume	151
Issue number	1
DOIs	https://doi.org/10.1049/ip-opt:20040142
Publication status	Published - 2004 Feb

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Computer Networks and Communications
Electrical and Electronic Engineering

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10.1049/ip-opt:20040142

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@article{b3d4e4879854464fa4eb1e57d2ca65f3,

title = "Uncooled low-voltage AIGaAsSb/LnGaAsSb/GaSB avalanche photodetectors",

abstract = "Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/ GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.",

author = "Sulima, {O. V.} and Mauk, {M. G.} and Shellenbarger, {Z. A.} and Cox, {J. A.} and Li, {J. V.} and Sims, {P. E.} and S. Datta and Rafol, {S. B.}",

year = "2004",

month = feb,

doi = "10.1049/ip-opt:20040142",

language = "English",

volume = "151",

pages = "1--5",

journal = "IEE Proceedings: Optoelectronics",

issn = "1350-2433",

publisher = "Institute of Electrical Engineers",

number = "1",

}

TY - JOUR

T1 - Uncooled low-voltage AIGaAsSb/LnGaAsSb/GaSB avalanche photodetectors

AU - Sulima, O. V.

AU - Mauk, M. G.

AU - Shellenbarger, Z. A.

AU - Cox, J. A.

AU - Li, J. V.

AU - Sims, P. E.

AU - Datta, S.

AU - Rafol, S. B.

PY - 2004/2

Y1 - 2004/2

N2 - Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/ GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.

AB - Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/ GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.

UR - http://www.scopus.com/inward/record.url?scp=1242265195&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=1242265195&partnerID=8YFLogxK

U2 - 10.1049/ip-opt:20040142

DO - 10.1049/ip-opt:20040142

M3 - Article

AN - SCOPUS:1242265195

SN - 1350-2433

VL - 151

SP - 1

EP - 5

JO - IEE Proceedings: Optoelectronics

JF - IEE Proceedings: Optoelectronics

IS - 1

ER -

Uncooled low-voltage AIGaAsSb/LnGaAsSb/GaSB avalanche photodetectors

Abstract

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