Uncooled low-voltage AIGaAsSb/LnGaAsSb/GaSB avalanche photodetectors

O. V. Sulima, M. G. Mauk, Z. A. Shellenbarger, J. A. Cox, Jian V. Li, P. E. Sims, S. Datta, S. B. Rafol

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28 Citations (Scopus)

Abstract

Low-voltage AlGaAsSb/InGaAsSb/GaSb separate absorption and multiplication avalanche photodiodes (SAM-APD), as well as InGaAsSb/GaSb APDs with an AlGaAsSb passivating layer, are fabricated using liquid phase epitaxy. Formation of the p-n junction is performed either epitaxially or through diffusion of Zn from the vapour phase. Responsivity as high as 43 A/W at wavelength of 2100 nm is achieved at room temperature in AlGaAsSb/InGaAsSb/ GaSb SAM-APDs reverse biased at 6.7 V. Relatively high responsivity (8.9 A/W at 2000 nm) was also measured in an InGaAsSb/GaSb APD reverse biased at 7.5 V.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalIEE Proceedings: Optoelectronics
Volume151
Issue number1
DOIs
Publication statusPublished - 2004 Feb 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Computer Networks and Communications
  • Electrical and Electronic Engineering

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