Under-layer behavior study of low resistance Ta/TaNx barrier film

Yu Sheng Wang, Chi Cheng Hung, Wen Hsi Lee, Shih Chieh Chang, Ying Lang Wang

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)

Abstract

This study finds that the resistivity of Ta/TaNx films depends on both the Ar re-sputtering amount and the N2 flow of under-layer TaNx deposition. As the Ar re-sputtering amount of under-layer TaNx films increases, the resistivity of Ta/TaNx bi-layers decreases because Ar re-sputtering can provide a driving force to make the upper Ta metal phase transformation from a high-resistivity β-phase to a low-resisitivty α-phase. On the other hand, increasing the N2 flow of under-layer TaNx deposition also makes the Ta resistivity trend down. The behavior is because increasing the N2 flow can lower the energy barrier of phase transformation from β-phase Ta to α-phase Ta. A proposed model is provided to describe the effect of the Ar re-sputtering amount and the N2 flow of under-layer TaNx deposition on the phase transformation of upper Ta metals.

Original languageEnglish
Pages (from-to)5241-5243
Number of pages3
JournalThin Solid Films
Volume516
Issue number16
DOIs
Publication statusPublished - 2008 Jun 30

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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