Undoped and Ga-doped hexagonal platelet interconnected ZnS nanowires: Cathodoluminescence and metal-semiconductor electron transport transition

Yen Chih Chen, Chao Hung Wang, Wei Ting Chen, Bi Hua Li, Li Wei Tu, Chuan Pu Liu

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Undoped and Ga-doped ZnS nanowires comprising hexagonal platelets with high carrier concentrations are derived using different substrates in the evaporation and condensation process. Cathodoluminescence results show that the dominant emission switches from near-band-edge emissions for the undoped ZnS nanowires to defect emissions for Ga-doped ZnS nanowires. The current-voltage results of the Ga-doped ZnS nanowires indicate low resistivity and unusual metal-like electron conduction following electron-phonon interactions at above 50 K, in contrast to the semiconductor behavior of the undoped ZnS nanowires.

Original languageEnglish
Pages (from-to)761-764
Number of pages4
JournalScripta Materialia
Volume64
Issue number8
DOIs
Publication statusPublished - 2011 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys

Fingerprint

Dive into the research topics of 'Undoped and Ga-doped hexagonal platelet interconnected ZnS nanowires: Cathodoluminescence and metal-semiconductor electron transport transition'. Together they form a unique fingerprint.

Cite this