Undoped SiGe FETs with metal-insulator-semiconductor contacts

Liang Yu Chen, Yu Feng Hsieh, Kuo-Hsing Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With relaxed SiGe, this work elaborates the correlation of semiconductor band edges and source-drain metal workfunction for the electrical characteristics of p- and n-channel FETs based on numerical simulations. For a given high workfunction source-drain metal, it is found that the on-current, threshold voltage and off-current of p-channel devices increase monotonously with the Ge mole fraction. The trend of the n-channel devices, however, seems more complicated, but it can be interpreted by the band edge variation of SiGe alloy.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-96
Number of pages2
Volume2017-January
ISBN (Electronic)9784863486478
DOIs
Publication statusPublished - 2017 Dec 29
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 2017 Jun 42017 Jun 5

Other

Other22nd Silicon Nanoelectronics Workshop, SNW 2017
CountryJapan
CityKyoto
Period17-06-0417-06-05

Fingerprint

Field effect transistors
Metals
Semiconductor materials
Threshold voltage
Computer simulation
Si-Ge alloys

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chen, L. Y., Hsieh, Y. F., & Kao, K-H. (2017). Undoped SiGe FETs with metal-insulator-semiconductor contacts. In 2017 Silicon Nanoelectronics Workshop, SNW 2017 (Vol. 2017-January, pp. 95-96). [8242314] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SNW.2017.8242314
Chen, Liang Yu ; Hsieh, Yu Feng ; Kao, Kuo-Hsing. / Undoped SiGe FETs with metal-insulator-semiconductor contacts. 2017 Silicon Nanoelectronics Workshop, SNW 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. pp. 95-96
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Chen, LY, Hsieh, YF & Kao, K-H 2017, Undoped SiGe FETs with metal-insulator-semiconductor contacts. in 2017 Silicon Nanoelectronics Workshop, SNW 2017. vol. 2017-January, 8242314, Institute of Electrical and Electronics Engineers Inc., pp. 95-96, 22nd Silicon Nanoelectronics Workshop, SNW 2017, Kyoto, Japan, 17-06-04. https://doi.org/10.23919/SNW.2017.8242314

Undoped SiGe FETs with metal-insulator-semiconductor contacts. / Chen, Liang Yu; Hsieh, Yu Feng; Kao, Kuo-Hsing.

2017 Silicon Nanoelectronics Workshop, SNW 2017. Vol. 2017-January Institute of Electrical and Electronics Engineers Inc., 2017. p. 95-96 8242314.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - With relaxed SiGe, this work elaborates the correlation of semiconductor band edges and source-drain metal workfunction for the electrical characteristics of p- and n-channel FETs based on numerical simulations. For a given high workfunction source-drain metal, it is found that the on-current, threshold voltage and off-current of p-channel devices increase monotonously with the Ge mole fraction. The trend of the n-channel devices, however, seems more complicated, but it can be interpreted by the band edge variation of SiGe alloy.

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Chen LY, Hsieh YF, Kao K-H. Undoped SiGe FETs with metal-insulator-semiconductor contacts. In 2017 Silicon Nanoelectronics Workshop, SNW 2017. Vol. 2017-January. Institute of Electrical and Electronics Engineers Inc. 2017. p. 95-96. 8242314 https://doi.org/10.23919/SNW.2017.8242314