Undoped SiGe FETs with metal-insulator-semiconductor contacts

Liang Yu Chen, Yu Feng Hsieh, Kuo Hsing Kao

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With relaxed SiGe, this work elaborates the correlation of semiconductor band edges and source-drain metal workfunction for the electrical characteristics of p- and n-channel FETs based on numerical simulations. For a given high workfunction source-drain metal, it is found that the on-current, threshold voltage and off-current of p-channel devices increase monotonously with the Ge mole fraction. The trend of the n-channel devices, however, seems more complicated, but it can be interpreted by the band edge variation of SiGe alloy.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages95-96
Number of pages2
ISBN (Electronic)9784863486478
DOIs
Publication statusPublished - 2017 Dec 29
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 2017 Jun 42017 Jun 5

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Other

Other22nd Silicon Nanoelectronics Workshop, SNW 2017
CountryJapan
CityKyoto
Period17-06-0417-06-05

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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