Uniform and ordered self-assembled Ge dots on patterned Si substrates with selectively epitaxial growth technique

G. Jin, J. Wan, Y. H. Luo, J. L. Liu, K. L. Wang

Research output: Contribution to journalConference articlepeer-review

15 Citations (Scopus)

Abstract

In this work, we report the controlled growth of one-dimensional (1D) and two-dimensional uniform, well-arranged self-assembled Ge dots grown on patterned Si (0 0 1) substrates. Selectively epitaxial growth (SEG) of Si mesas was first performed in an MBE system equipped with a gas source of Si2H6 and a Knudsen cell of Ge. Self-assembled Ge dots on one-dimensional Si SEG stripe mesas demonstrate the periodic arrangement with uniform size, which is different from the bi-modal distribution as normally seen. This cooperative arrangement is attributed to the nature of self-regulation of the self-assembled system with the assistance of the spatial confinement. A systematic study of the one-dimensional arrangement will be discussed. The atomic force microscopic results of two-dimensional arrays show that there are several kinds of the arrangement configurations, indicating the possibility of the controlling the placement of self-assembled Ge dots. Finally, we will discuss the mechanisms of the cooperative arrangements and the possibility to control freely spontaneous growth of Ge dots on pre-grown Si mesas.

Original languageEnglish
Pages (from-to)1100-1105
Number of pages6
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - 2001 Jul
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 2000 Sep 112000 Sep 15

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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