TY - JOUR
T1 - Uniform CoSi2 nano-nucleus formation by oxide mediated silicidation with a Ti capping layer
AU - Chang, Juin Jie
AU - Hsieh, Tsung Eong
AU - Liu, Chuan Pu
AU - Wang, Ying Lang
N1 - Funding Information:
The work is supported by NSC, Taiwan under the project number of NSC93-2112-M110-008. The authors thank Mr. Hung-Chin Chung for analysis assistance. We are also grateful for the use of the sputter equipment in the Semiconductor Laboratory, which is supported and maintained by the Department of Materials Science and Engineering at National Cheng-Kung University, Taiwan.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2006/3/1
Y1 - 2006/3/1
N2 - The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.
AB - The nucleation stage toward CoSi2 with average island size of about 4 nm and uniform island size distribution is obtained from a TiN/Co/Ti/Co/SiOx/Si multilayer with the SiOx as a mediated layer by annealing at 460 °C for 240 s followed by 600 °C 240 s. It is found that Ti capping layer can enhance Co diffusion into the Si substrate at higher temperature (600 °C 240 s) annealing, which results in larger nucleus size (average grain size about 12 nm) but nonuniform nucleus size distribution. However, two-step annealing for 460 °C 240 s followed by 600 °C 240 s results in a smaller average nucleus size with better nucleus size distribution. The mechanism responsible for the discrepancy is discussed in the paper.
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U2 - 10.1016/j.tsf.2005.07.073
DO - 10.1016/j.tsf.2005.07.073
M3 - Conference article
AN - SCOPUS:30944449033
SN - 0040-6090
VL - 498
SP - 85
EP - 89
JO - Thin Solid Films
JF - Thin Solid Films
IS - 1-2
T2 - Proceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD
Y2 - 12 November 2004 through 14 November 2004
ER -