Uniform resistive switching properties of sol-gel multilayered BaTiNiOx memory device

Yu An Li, Yu Chi Chang, Ke Jing Lee, Cheng Jung Lee, Chiou Che Hsieh, Tzu Han Su, Li Wen Wang, Yeong Her Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The modification of multilayered barium titanate nickelate (BTN) thin films on ITO/glass substrate is adopted to enhance the device performance. The XPS analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTN layer. In addition, the Ni acts as clusters and plays a critical role in the formation/rupture of cone-shaped conductive paths during resistive switching, which promotes the local alignment of oxygen vacancies among metallic-Ni clusters. Thus, the sol-gel BTN memory devices with high ON/OFF ratio and excellent current distribution can be achieved.

Original languageEnglish
Title of host publicationProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-2
Number of pages2
ISBN (Electronic)9781538614457
DOIs
Publication statusPublished - 2018 Jun 22
Event7th International Symposium on Next-Generation Electronics, ISNE 2018 - Taipei, Taiwan
Duration: 2018 May 72018 May 9

Publication series

NameProceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018

Other

Other7th International Symposium on Next-Generation Electronics, ISNE 2018
CountryTaiwan
CityTaipei
Period18-05-0718-05-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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