@inproceedings{c98e7ab98bc94e858dcc11c3f5dd1a1a,
title = "Uniform resistive switching properties of sol-gel multilayered BaTiNiOx memory device",
abstract = "The modification of multilayered barium titanate nickelate (BTN) thin films on ITO/glass substrate is adopted to enhance the device performance. The XPS analysis reveals the concentration of oxygen vacancies can be reduced by the increasing number of the BTN layer. In addition, the Ni acts as clusters and plays a critical role in the formation/rupture of cone-shaped conductive paths during resistive switching, which promotes the local alignment of oxygen vacancies among metallic-Ni clusters. Thus, the sol-gel BTN memory devices with high ON/OFF ratio and excellent current distribution can be achieved.",
author = "Li, {Yu An} and Chang, {Yu Chi} and Lee, {Ke Jing} and Lee, {Cheng Jung} and Hsieh, {Chiou Che} and Su, {Tzu Han} and Wang, {Li Wen} and Wang, {Yeong Her}",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 7th International Symposium on Next-Generation Electronics, ISNE 2018 ; Conference date: 07-05-2018 Through 09-05-2018",
year = "2018",
month = jun,
day = "22",
doi = "10.1109/ISNE.2018.8394655",
language = "English",
series = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1--2",
booktitle = "Proceedings - 2018 7th International Symposium on Next-Generation Electronics, ISNE 2018",
address = "United States",
}