Abstract
The unipolar resistive switching behavior of Pt/LixZn 1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content.
Original language | English |
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Article number | 203501 |
Journal | Applied Physics Letters |
Volume | 101 |
Issue number | 20 |
DOIs | |
Publication status | Published - 2012 Nov 12 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)