Unipolar resistive switching behavior of Pt/LixZn 1-xO/Pt resistive random access memory devices controlled by various defect types

Chun Cheng Lin, Zong Liang Tseng, Kuang Yao Lo, Chih Yu Huang, Cheng Shong Hong, Sheng Yuan Chu, Chia Chiang Chang, Chin Jyi Wu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The unipolar resistive switching behavior of Pt/LixZn 1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content.

Original languageEnglish
Article number203501
JournalApplied Physics Letters
Volume101
Issue number20
DOIs
Publication statusPublished - 2012 Nov 12

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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