TY - JOUR
T1 - Unveiling dopant concentration in boron doped Si ultrathin film
T2 - Enhanced analysis using time-dependent second harmonic generation
AU - Yen, Ting Yu
AU - Shih, Meng Ting
AU - Song, Long Fu
AU - Hung, Kung Ming
AU - Lo, Kuang Yao
N1 - Funding Information:
The authors would like to thank the Ministry of Science and Technology of the Republic of China, Taiwan , for financially supporting this research under Contract No. MOST 111-2112-M-006-035 . This work was also supported by Instrumentation Center at National Tsing Hua University for the TOF-SIMS.
Publisher Copyright:
© 2023 Elsevier B.V.
PY - 2023/10
Y1 - 2023/10
N2 - The evaluation of dopant concentration is essential in fabricating advanced field-effect transistors. In this study, we effectively leverage the unique characteristics of boron traps in the in-situ boron (B) doped Si ultrathin film (DSUTF) to examine the evolution of electric field through time-dependent second harmonic generation (TD-SHG). During the laser irradiation, internal photoemission (IPE) occurs in our system due to multiphoton absorption which enable the electron injected from Si to SiO2. Our findings demonstrate that the presence of oxygen molecules weakens the electric field, resulting in a consequential reduction in SHG intensity. Therefore, we propose a model to elucidate the relationship between electrons and oxygen. Furthermore, we observe a robust monotonic correlation between the boron induced electric field and the dopant concentration. These results are consistent with first-principles calculation and capacitance-voltage measurement. Utilizing TD-SHG method for inspection of B dopant concentration in DSUTF provide a productive way for in-line inspection in semiconductor fabrication.
AB - The evaluation of dopant concentration is essential in fabricating advanced field-effect transistors. In this study, we effectively leverage the unique characteristics of boron traps in the in-situ boron (B) doped Si ultrathin film (DSUTF) to examine the evolution of electric field through time-dependent second harmonic generation (TD-SHG). During the laser irradiation, internal photoemission (IPE) occurs in our system due to multiphoton absorption which enable the electron injected from Si to SiO2. Our findings demonstrate that the presence of oxygen molecules weakens the electric field, resulting in a consequential reduction in SHG intensity. Therefore, we propose a model to elucidate the relationship between electrons and oxygen. Furthermore, we observe a robust monotonic correlation between the boron induced electric field and the dopant concentration. These results are consistent with first-principles calculation and capacitance-voltage measurement. Utilizing TD-SHG method for inspection of B dopant concentration in DSUTF provide a productive way for in-line inspection in semiconductor fabrication.
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U2 - 10.1016/j.surfin.2023.103236
DO - 10.1016/j.surfin.2023.103236
M3 - Article
AN - SCOPUS:85166644333
SN - 2468-0230
VL - 41
JO - Surfaces and Interfaces
JF - Surfaces and Interfaces
M1 - 103236
ER -