Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-based Light-Emitting Diodes

Shui-Jinn Wang, Hon-Yi Kuo, Wei-Chi Lee, Kai-Ming Uang, Tron-Min Chen, Jui-Chiang Chou, Hon Kuan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationInternational Conference on Solid State Devices and materials (SSDM'08)
Place of PublicationTsukuba International Congress Center, Ibaraki, Japan
Publication statusPublished - 2008 Sep 23

Cite this

Wang, S-J., Kuo, H-Y., Lee, W-C., Uang, K-M., Chen, T-M., Chou, J-C., & Kuan, H. (2008). Use of Aluminum-Doped Zinc-Oxide Film as a Strain-Relief and Schottky Blocking Layer for the Fabrication of Vertical Structure Metal Substrate GaN-based Light-Emitting Diodes. In International Conference on Solid State Devices and materials (SSDM'08)