Through the use of elastic conductive adhesive (ECA) as the bonding agent and patterned laser lift-off technology, a flexible metal substrate technology for the fabrication of vertical structured GaN-based light-emitting diodes (Flex-LEDs) was proposed and demonstrated. It showed that the Flex-LEDs have negligible changes in dominant wavelength-current and light output intensity-current-voltage characteristics when subjected to an external bending stress, indicating that the ECA used in the present technology performed well as a buffer to external stresses. As compared with conventional sapphire substrate GaN-based LEDs, Flex-LEDs with a chip size of 600 × 600 μm2 showed an increase in light output intensity (power) about 216% (80%) at 120 mA with an essential decrease in forward voltage from 3.51 to 3.3 V.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering