Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes

Shui Jinn Wang, Kai Ming Uang, Shiue Lung Chen, Yu Cheng Yang, Shu Cheng Chang, Tron Min Chen, Chao Hsuing Chen, Bor Wen Liou

Research output: Contribution to journalArticle

105 Citations (Scopus)

Abstract

The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward voltage drop of the VM-LED at 20-80 mA is about 10%-21% lower, while the light output power (Lop) is more than twice in magnitude. Especially, the Lop exhibits no saturation or degradation at an injection current up to 520 mA which is about 4.3 times higher than that of the regular one. Substantial improvements in the VM-LEDs performances are mainly attributed to the use of metallic substrate which results in less current crowding, larger effective area, and higher thermal conductivity.

Original languageEnglish
Article number011111
JournalApplied Physics Letters
Volume87
Issue number1
DOIs
Publication statusPublished - 2005 Jul 4

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electroplating
light emitting diodes
nickel
fabrication
lasers
crowding
output
thermal conductivity
injection
degradation
saturation
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Shui Jinn ; Uang, Kai Ming ; Chen, Shiue Lung ; Yang, Yu Cheng ; Chang, Shu Cheng ; Chen, Tron Min ; Chen, Chao Hsuing ; Liou, Bor Wen. / Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes. In: Applied Physics Letters. 2005 ; Vol. 87, No. 1.
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abstract = "The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward voltage drop of the VM-LED at 20-80 mA is about 10{\%}-21{\%} lower, while the light output power (Lop) is more than twice in magnitude. Especially, the Lop exhibits no saturation or degradation at an injection current up to 520 mA which is about 4.3 times higher than that of the regular one. Substantial improvements in the VM-LEDs performances are mainly attributed to the use of metallic substrate which results in less current crowding, larger effective area, and higher thermal conductivity.",
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Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes. / Wang, Shui Jinn; Uang, Kai Ming; Chen, Shiue Lung; Yang, Yu Cheng; Chang, Shu Cheng; Chen, Tron Min; Chen, Chao Hsuing; Liou, Bor Wen.

In: Applied Physics Letters, Vol. 87, No. 1, 011111, 04.07.2005.

Research output: Contribution to journalArticle

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T1 - Use of patterned laser liftoff process and electroplating nickel layer for the fabrication of vertical-structured GaN-based light-emitting diodes

AU - Wang, Shui Jinn

AU - Uang, Kai Ming

AU - Chen, Shiue Lung

AU - Yang, Yu Cheng

AU - Chang, Shu Cheng

AU - Chen, Tron Min

AU - Chen, Chao Hsuing

AU - Liou, Bor Wen

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AB - The fabrication process and performance characteristics of a vertical-structured GaN-based light-emitting diode (VM-LED) employing nickel electroplating and patterned laser liftoff techniques are presented. As compared to regular LED, the forward voltage drop of the VM-LED at 20-80 mA is about 10%-21% lower, while the light output power (Lop) is more than twice in magnitude. Especially, the Lop exhibits no saturation or degradation at an injection current up to 520 mA which is about 4.3 times higher than that of the regular one. Substantial improvements in the VM-LEDs performances are mainly attributed to the use of metallic substrate which results in less current crowding, larger effective area, and higher thermal conductivity.

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